A novel microdetector array (MDA) for monitoring electron beam (eBeam) and extreme ultraviolet (EUV) lithography processes in 5 nm and beyond FinFET technology is first-time presented. This on-wafer detector array consists of high-density sensing cells which are fully compatible with standard FinFET CMOS processes. Fin coupling structures and energy-sensing pads are first applied in an ultrasmall detector for realizing efficient eBeam and EUV photon detection. In advanced lithography process, eBeam or EUV level projected on the wafer can be precisely recorded on the on-wafer MDA without power or batteries. The distributions and variations on the beam intensities collected by MDA can be electrically measured in real time or inline through wafer level test after eBeam or EUV exposures. The proposed MDA is expected to provide real-time feedback for the optimization and stable maintenance of advanced photolithography processed critical to the development nanometer CMOS technologies.

中文翻译：

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用于高级光刻工艺的基于晶圆 FinFET 的 EUV/电子束探测器阵列

首次提出了一种新型微探测器阵列 (MDA)，用于监测 5 纳米及以上 FinFET 技术中的电子束 (eBeam) 和极紫外 (EUV) 光刻工艺。这种晶圆上探测器阵列由与标准 FinFET CMOS 工艺完全兼容的高密度传感单元组成。鳍片耦合结构和能量传感垫首先应用于超小型探测器，以实现高效的电子束和 EUV 光子探测。在先进的光刻工艺中，投射在晶圆上的电子束或 EUV 水平可以精确地记录在晶圆上的 MDA 上，无需电源或电池。MDA 收集的光束强度的分布和变化可以在电子束或 EUV 曝光后通过晶圆级测试实时或在线测量。