To figure out the effects of aluminum-doped ZnO (AZO) and Ag layers for the transparent electrode vertical (TEV) photoconductive semiconductor switch (PCSS) reported in our previous works, several different structures of high power, new vertical, extrinsic-triggered PCSS were designed and their performances are presented. All the PCSSs were fabricated on the vanadium compensated semi-insulating (VCSI) 4H-SiC substrates. The ON-state performance of all device versions was characterized by a test circuit without load resistor. Among all structures, the version with AZO transparent window, AZO subcontact layer, and silver mirror reflector has been testified to be the most reasonable structure, and shows the best results as well. Its minimum ON-state resistance is $6.11~\Omega $ at the optical power density of 2.62 MW/cm2. The factor for the best ON-state performance of this structure is attributed to the improvement of utilization efficiency of laser energy, and good contact between the AZO and SiC substrate.

中文翻译：

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分析铝掺杂的 ZnO 和 Ag 层对透明电极垂直 PCSS 的影响

为了弄清楚铝掺杂的 ZnO (AZO) 和 Ag 层对我们之前工作中报道的透明电极垂直 (TEV) 光电导半导体开关 (PCSS) 的影响，几种不同结构的高功率、新型垂直、外在触发 PCSS设计并展示了它们的性能。所有的 PCSS 都是在钒补偿半绝缘 (VCSI) 4H-SiC 衬底上制造的。所有器件版本的导通状态性能均以没有负载电阻的测试电路为特征。在所有结构中，AZO透明窗口、AZO子接触层和银镜反射器的版本被证明是最合理的结构，也显示出最好的效果。在光功率密度为 2.62 MW/cm2 时，其最小导通电阻为 $6.11~Ω。