Quantum dots (QDs) have broad application prospects in displays such as full-color light-emitting diodes (LEDs) and micro-LEDs. However, an ultrahigh concentration of QDs is required to eliminate the pumping light for achieving high color purity, leading to significant reduction in the photoluminescence (PL) intensity of the QDs and the generation of much more heat. In this article, the PL intensity, thermal performance, and color purity of QD-LEDs were comprehensively improved by introducing a pumping-light absorber (PLA). Results indicate that the PLA packaging structure achieves a color purity that is similar to that of a conventional structure with ultrahigh QD concentration; the radiant power of blue light was reduced by 81.6% and this leads to a large shift in the color coordinates from (0.18, 0.26) to (0.20, 0.57). Moreover, the PLA packaging structure results in higher electroluminescence (EL) intensity and lower operating temperatures than the conventional structure. This is because of the higher color-conversion efficiency and partial transfer of thermal energy to the PLA layer. In particular, the EL intensity of the QD-LEDs increased by 25.1% and the steady-state temperature was reduced to 58.9 °C, which is 19.75% lower than that of a conventional structure (73.4 °C). In addition, the PLA packaging structure works equally well with ultraviolet (UV) pumping sources to achieve a higher color purity (enhancing the color gamut by 50.1% when using a 405-nm source).

中文翻译：

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使用泵浦光吸收器研究量子点发光二极管的光致发光强度、热性能和颜色纯度

量子点（QD）在全彩发光二极管（LED）和微型LED等显示器中具有广阔的应用前景。然而，需要超高浓度的量子点来消除泵浦光以实现高色纯度，从而导致量子点的光致发光 (PL) 强度显着降低并产生更多热量。在本文中，通过引入泵浦光吸收剂 (PLA)，QD-LED 的 PL 强度、热性能和色纯度得到了全面改善。结果表明，PLA封装结构达到了与具有超高QD浓度的常规结构相似的色纯度；蓝光的辐射功率降低了 81.6%，这导致颜色坐标从 (0.18, 0.26) 大幅偏移到 (0.20, 0.57)。而且，PLA 封装结构比传统结构具有更高的电致发光 (EL) 强度和更低的工作温度。这是因为更高的颜色转换效率和部分热能转移到 PLA 层。特别是QD-LEDs的EL强度增加了25.1%，稳态温度降低到58.9°C，比传统结构(73.4°C)低19.75%。此外，PLA 封装结构与紫外线 (UV) 泵浦源同样适用，以实现更高的色纯度（使用 405 纳米光源时色域提高 50.1%）。这是因为更高的颜色转换效率和部分热能转移到 PLA 层。特别是QD-LEDs的EL强度增加了25.1%，稳态温度降低到58.9°C，比传统结构(73.4°C)低19.75%。此外，PLA 封装结构与紫外线 (UV) 泵浦源同样适用，以实现更高的色纯度（使用 405 纳米光源时色域提高 50.1%）。这是因为更高的颜色转换效率和部分热能转移到 PLA 层。特别是QD-LEDs的EL强度增加了25.1%，稳态温度降低到58.9°C，比传统结构(73.4°C)低19.75%。此外，PLA 封装结构与紫外线 (UV) 泵浦源同样适用，以实现更高的色纯度（使用 405 纳米光源时色域提高 50.1%）。