In this article, we investigated the destructive behavior of the latest power diode when operating a hard-switching process. From the numerical simulation analysis, the destruction behavior originates in the enhanced impact ionization at the p-n junction on the anode side and current filament in the active region. A relaxing electric field on the anode side and a moderated electric field on the cathode side prevent the above-mentioned behavior. These improvements result from controlling the carrier-plasma layer in the n-buffer layer on the cathode side. This article demonstrates the effective n-buffer technology for the power diode that achieves superior dynamic robustness and high operating temperature over 448 K.

中文翻译：

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基于硅的功率二极管的 N 缓冲器设计旨在实现高动态稳健性和超过 448 K 的高工作温度

在本文中，我们研究了最新功率二极管在运行硬开关过程时的破坏行为。从数值模拟分析，破坏行为源于阳极侧pn结和有源区电流灯丝处增强的碰撞电离。阳极侧的弛豫电场和阴极侧的缓和电场防止了上述行为。这些改进源于控制阴极侧 n 缓冲层中的载流子-等离子体层。本文展示了用于功率二极管的有效 n 缓冲器技术，该技术可实现卓越的动态稳健性和超过 448 K 的高工作温度。