A series of electric field profile simulations in gallium nitride (GaN) p-i-n vertical diodes with negative bevel termination is carried out to optimize the bevel design. The bevel angles are varied from 90° to 0.1° with reasonably small increments to study the impact of the bevel angle on the electric field profile. The doping densities are also varied to study a more generalized trend; a new parameter defined as transition angle $\theta _{{\text {t}}}$ is proposed to characterize the effectivity of a beveled edge termination. Considering the potential dry etch damage on the bevel side-wall during device fabrication, the fixed surface charge from the dangling bonds and commonly used dielectric passivation are also added separately to investigate their influence. This article presents a comprehensive simulation study of GaN p-i-n diode with negative beveled edge termination, making it a useful guide for designing a simple and effective beveled edge termination, which eventually helps to enable the routine avalanche in GaN p-i-n diodes.

中文翻译：

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在 GaN 垂直引脚二极管斜角、掺杂和钝化中设计斜边端接

对具有负斜面终端的氮化镓 (GaN) pin 垂直二极管进行了一系列电场分布模拟，以优化斜面设计。斜角从 90° 到 0.1° 以合理的小增量变化，以研究斜角对电场分布的影响。掺杂密度也不同以研究更普遍的趋势；提出了一个定义为过渡角 $\theta _{{\text {t}}}$ 的新参数来表征斜边终止的有效性。考虑到器件制造过程中斜面侧壁上潜在的干蚀刻损坏，还单独添加了来自悬空键的固定表面电荷和常用的介电钝化，以研究它们的影响。