This article proposes a MATLAB-based optimization methodology of the drift region specific ON-resistance ( ${R}_{on,sp}$ ) both for the high-permittivity ( $\text{H}{k}$ ) MOSFETs and superjunction (SJ) MOSFETs with design parameters expressed by breakdown voltage (BV) and aspect ratio (AR). The optimized method has three distinctive features. First, based on the built-in functions in MATLAB, the proposed method is very efficient to accurately obtain the optimized ${R}_{on,sp}$ ( ${R}_{on,sp(opt)}$ ) and the design parameters for both MOSFETs. Second, as the reflection of the process difficulty in the $\text{H}{k}$ or SJ structure, AR is used as one of the design variables. Third, the cubic polynomial functions are used to obtain a more accurate fitting for the optimization. The optimized results demonstrate that for a given BV, the ${R}_{on,sp(opt)}$ for the SJ MOSFET decreases as AR increases, whereas an optimum AR exists for a minimal ${R}_{on,sp(opt)}$ for the $\text{H}{k}$ MOSFET. Extensive comparisons demonstrate that when AR is small and BV is large, the ${R}_{on,sp(opt)}$ for the $\text{H}{k}$ MOSFET could be lower than that for the SJ MOSFET. Parameter designs are performed for the 900-V $\text{H}{k}$ MOSFET and SJ MOSFET. The impacts of important parameter variations on BV and ${R}_{on,sp}$ are also discussed. The validity of the proposed optimization method is demonstrated by the TCAD simulations.

中文翻译：

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具有相同纵横比的垂直功率 Hk MOSFET 和 SJ MOSFET 漂移区特定导通电阻的优化和比较

本文提出了一种基于 MATLAB 的漂移区特定导通电阻优化方法（ ${R}_{on,sp}$ ) 对于高介电常数 ( $\text{H}{k}$ ) MOSFET 和超级结 (SJ) MOSFET，其设计参数由击穿电压 (BV) 和纵横比 (AR) 表示。优化的方法具有三个显着特征。首先，基于MATLAB中的内置函数，所提出的方法可以非常有效地准确获得优化的 ${R}_{on,sp}$ ( ${R}_{on,sp(opt)}$ ) 和两个 MOSFET 的设计参数。二、作为工艺难度的反映 $\text{H}{k}$ 或 SJ 结构，AR 用作设计变量之一。第三，三次多项式函数用于获得更精确的优化拟合。优化结果表明，对于给定的 BV， ${R}_{on,sp(opt)}$ 对于 SJ MOSFET，随着 AR 的增加而减小，而最佳 AR 存在于最小 ${R}_{on,sp(opt)}$ 为了 $\text{H}{k}$ MOSFET。大量比较表明，当 AR 较小且 BV 较大时， ${R}_{on,sp(opt)}$ 为了 $\text{H}{k}$ MOSFET 可能低于 SJ MOSFET。为 900-V 执行参数设计 $\text{H}{k}$ MOSFET 和 SJ MOSFET。重要参数变化对 BV 和 ${R}_{on,sp}$ 也在讨论中。TCAD 模拟证明了所提出的优化方法的有效性。