In this article, we report the fabrication of Zr-rich high- ${k}$ ferroelectric hafnium zirconium oxide (HZO) capacitor with TiN as the top and bottom electrodes demonstrating an equivalent oxide thickness (EOT) of 5.7 Å and remanent polarization ( ${P}_{r}$ ) of $\sim 16~\mu \text{C}$ /cm². High- ${k}$ value and low EOT was achieved by utilizing multiphase region of HZO as well as high pressure post metallization annealing (HPPMA). Despite the high- ${k}$ value of Zr-rich HZO films, the emergence of multiphase region at higher physical thickness when annealed using rapid thermal annealing (RTA) limits its EOT value. On the contrary, multiphase emerges at a smaller physical thickness in HPPMA due to the formation of more o-phase as revealed by grazing incidence X-ray diffractometer (GIXRD). The smaller physical thickness of HPPMA together with the demonstration of significantly higher dielectric constant (>50) by HZO in the vicinity of multiphase, was therefore, found to be very effective in reducing the EOT.

中文翻译：

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采用高压退火的高k HfₓZr₁₋ₓO₂铁电绝缘体

在本文中，我们报告了富锆高 ${k}$ 铁电铪锆氧化物 (HZO) 电容器以 TiN 作为顶部和底部电极，表现出 5.7 Å 的等效氧化物厚度 (EOT) 和剩余极化（ ${P}_{r}$ ） 的 $\sim 16~\mu \text{C}$ /厘米²。高的- ${k}$ 通过利用 HZO 的多相区域以及高压后金属化退火 (HPPMA) 实现了高值和低 EOT。尽管高 ${k}$ 值，当使用快速热退火 (RTA) 进行退火时，在更高物理厚度下出现的多相区域限制了其 EOT 值。相反，由于掠入射 X 射线衍射仪 (GIXRD) 显示的更多 o 相的形成，多相在 HPPMA 中以较小的物理厚度出现。因此，发现 HPPMA 的较小物理厚度以及多相附近 HZO 具有显着更高的介电常数 (>50) 对降低 EOT 非常有效。