Titanium-based contacts are envisioned for the integration of III–V device contacts on a 300-mm platform, such as photodetectors, semiconductor optical amplifiers (SOAs), and III–V silicon hybrid lasers. For the first time, the impact of the thermal budgets of process integration, back-end of line (BEOL), and long-term thermal stress on the electrical characteristics of the Ti/p-In_0.53Ga_0.47As and Ti/n-InP contacts has been investigated. Additional physical characterizations have been used to supplement the electrical properties on both systems. Results have indicated that, given a thermal budget between 350 °C and 450 °C during 60 s right after metal deposition, 1) Ti as a contact metal has led to contact resistivity in low $10^{-{5}}\,\,\Omega \cdot \text {cm}^{{2}}$ for p-contacts and in mid $10^{-{5}}\,\,\Omega \cdot \text {cm}^{{2}}$ for n-contacts, which is in accordance with the device requirements; and 2) process integration, BEOL, and long-term thermal stress will not induce any change of the electrical properties. In the scope of III–V silicon hybrid laser contact integration, Ti has hence been evidenced as a suitable candidate for both p- and n-contacts.

中文翻译：

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集成、BEOL 和热应力对 300 毫米平台上 III-V 族器件的 CMOS 兼容钛基触点的影响

钛基触点可用于在 300 毫米平台上集成 III-V 族器件触点，例如光电探测器、半导体光放大器 (SOA) 和 III-V 族硅混合激光器。工艺集成的热预算、生产线后端 (BEOL) 和长期热应力对 Ti/p-In _0.53 Ga _0.47 As 和 Ti/n-电气特性的影响已经研究了 InP 接触。额外的物理特性已被用于补充两个系统的电气特性。结果表明，在金属沉积后 60 秒内，如果热预算介于 350 °C 和 450 °C 之间，则 1) 作为接触金属的 Ti 导致接触电阻率较低 $10^{-{5}}\,\,\Omega \cdot \text {cm}^{{2}}$ 用于 p 触点和中间 $10^{-{5}}\,\,\Omega \cdot \text {cm}^{{2}}$ 对于 n 触点，符合器件要求；2) 工艺集成、BEOL 和长期热应力不会引起电气特性的任何变化。在 III-V 族硅混合激光触点集成范围内，Ti 已被证明是 p 和 n 触点的合适候选材料。