This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through tridimensional numerical simulations, accounting for different trap configurations, as well as devices with different channel lengths, nanowire widths, and doping concentrations. Experimental results of short-channel junctionless transistors have also been used to demonstrate the model’s applicability and accuracy.

中文翻译：

---

无结纳米线晶体管中低频噪声的分析模型

本文旨在为在不同偏置条件和温度下工作的无结纳米线晶体管 (JNT) 的低频噪声 (LFN) 提出一个紧凑的分析模型。该模型通过三维数值模拟进行验证，考虑到不同的陷阱配置，以及具有不同沟道长度、纳米线宽度和掺杂浓度的器件。短沟道无结晶体管的实验结果也被用来证明模型的适用性和准确性。