We investigate the GaAs_0.51Sb_0.49/In_0.53Ga_0.47As negative-capacitance vertical-tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling. Negative capacitance enhances vertical tunneling more significantly than corner tunneling due to the amplified vertical electric field. By TCAD optimization of the device, small ${I}_{{\mathrm {OFF}}}$ (10 pA/ $\mu \text{m}$ ) and large ${I}_{\text{ON}}$ ( $405~\mu \text{A}/\mu \text{m}$ ) at ${V}_{\text {DD}} = {0.5}$ V with 14 mV/dec sub- ${V}_{\text {t}}$ swing over 4 dec of current were obtained. Even at ${V}_{\text {DD}} ={0.1}$ V, the optimized NCVT-FET has 10 pA/ $\mu \text{m}~{I}_{\text{OFF}}$ , $5.86~\mu \text{A}/\mu \text{m}~{I}_{\text{ON}}$ ( $144\times $ higher than the nominal TFET), and ${I}_{\text{ON}}/{I}_{\text{OFF}}$ ratio of ${6} \times {10}^{{5}}$ .

中文翻译：

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负电容垂直隧道 FET (NCVT-FET) 的优化

我们研究了 GaAs _0.51 Sb _0.49 /In _0.53 Ga _0.47 As 负电容垂直隧道 FET (NCVT-FET) 以最大化其在角隧道上的垂直隧道。由于放大的垂直电场，负电容比角隧穿更显着地增强垂直隧穿。通过TCAD对设备进行优化，体积小 ${I}_{{\mathrm {OFF}}}$ (10 pA/ $\mu \text{m}$ ) 和大 ${I}_{\text{ON}}$ ( $405~\mu \text{A}/\mu \text{m}$ ） 在 ${V}_{\text {DD}} = {0.5}$ V 与 14 mV/dec sub- ${V}_{\text {t}}$ 获得了超过 4 dec 的电流摆动。即使在 ${V}_{\text {DD}} ={0.1}$ V，优化后的 NCVT-FET 具有 10 pA/ $\mu \text{m}~{I}_{\text{OFF}}$ , $5.86~\mu \text{A}/\mu \text{m}~{I}_{\text{ON}}$ ( $144\次 $ 高于标称 TFET），以及 ${I}_{\text{ON}}/{I}_{\text{OFF}}$ 比率 ${6} \times {10}^{{5}}$ .