A new class of metal–insulator tunneling transistor (MITT) devices is proposed and investigated. The planar dual-gate structure allows for complete gate field penetration of the transistor channel to modulate tunneling current across the channel. For a 5-nm channel length, with contact geometries that reflect the reality of fabricating at such a scale, we show that a 10% decrease in the effective electron tunneling length results in a $5.5\times $ increase in current up to $4.4{\times }10^{-6} mA/\mu {}m$ . The device demonstrates an ON-/ OFF-current ratio that is $2.5\times $ greater than that of a complementary metal–oxide–semiconductor (CMOS)-style MITT with a 5-nm channel length. Without the use of a second gate insulator, the source-to-drain current density is more than 10⁴ times greater than the source-to-gate leakage current density, indicating the efficacy of the presented realistic MITT implementation.

中文翻译：

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深栅场穿透 Au:ZrO2 金属绝缘体隧道晶体管

提出并研究了一类新的金属绝缘体隧道晶体管（MITT）器件。平面双栅极结构允许晶体管通道的完整栅极场穿透以调节通道上的隧道电流。对于 5 nm 沟道长度，接触几何形状反映了这种规模制造的现实，我们表明有效电子隧道长度减少 10% 会导致 $5.5\times $ 电流增加到 $4.4{\times }10^{-6} mA/\mu {}m$ . 该器件展示了一个开/关电流比，即 $2.5\times $ 大于具有 5 纳米通道长度的互补金属氧化物半导体 (CMOS) 型 MITT。在不使用第二栅极绝缘体的情况下，源极至漏极电流密度是源极至栅极漏电流密度的10 ⁴倍以上，表明所呈现的现实 MITT 实施的功效。