2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs manufactured with the same cell-pitch and process to quantify the improved performance. The gate charge and high-frequency figures-of-merit (HF-FOM) of the 2.3 kV SG-MOSFETs were experimentally verified to be a factor of 1.8 $\times$ better than that of the conventional MOSFETs with no difference in specific on-resistance.

中文翻译：

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具有减少栅极电荷的 2.3 kV 4H-SiC 累积沟道分栅平面功率 MOSFET

2.3 kV 4H-SiC 分裂栅 (SG) 平面累积沟道功率 MOSFET 已在 6 英寸商业代工厂成功制造，具有良好的参数分布。将这些器件的测量电气特性与使用相同单元间距和工艺制造的传统 ACCUFET 进行比较，以量化改进的性能。2.3 kV SG-MOSFET 的栅极电荷和高频品质因数 (HF-FOM) 经实验验证为 1.8 倍 $\times$ 比传统 MOSFET 更好，比导通电阻没有差异。