当前位置: X-MOL 学术IEEE J. Electron Devices Soc. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Comprehensive n-and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects
IEEE Journal of the Electron Devices Society ( IF 2.0 ) Pub Date : 2020-01-01 , DOI: 10.1109/jeds.2020.2991677
Raseong Kim , Uygar E. Avci , Ian A. Young

Comprehensive channel material benchmarking for n- and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In0.7Ga0.3As, In0.53Ga0.47As, GaAs, and Ge for nMOS, Si and Ge for pMOS) are covered using hybrid simulation of quantum ballistic transport and semi-classical Monte Carlo. Current-voltage characteristics and performance metrics such as the capacitance and effective drive current ( $I_{eff}$ ) are explored considering device parasitic components. For low power operation, III-V nMOS may deliver good performance while Ge n- and pMOS with different source/drain tip designs may give performance advantage over Si from low power to high performance operations. CMOS benchmarking results for $I_{eff}$ , capacitance, and switching energy vs. delay (for gate capacitance loading vs. interconnect wire capacitance loading) are also presented for various homogeneous and hybrid combinations of n- and pMOS (Si CMOS, III-V hybrid CMOS, Ge hybrid CMOS, and Ge CMOS). Finally, sensitivity analysis is performed for $I_{eff}$ on the parasitic resistance ( $R_{SD}$ ) and contact resistivity ( ${\boldsymbol{\rho }} _{c}$ ). Novel channel materials may relax the $R_{SD}$ and ${\boldsymbol{\rho }} _{c}$ requirements to match the $I_{eff}$ performance of Si reference. Comprehensive literature reviews of experimental ${\boldsymbol{\rho }} _{c}$ ’s of novel materials are also presented to discuss the effect of material-dependent $R_{SD}$ .

中文翻译:

考虑到量子传输和载流子散射效应的综合 n 和 pMOSFET 沟道材料基准测试和 CMOS 性能指标分析

考虑到量子传输和载流子散射的影响,对 n- 和 pMOS 进行了全面的沟道材料基准测试。各种沟道材料选项(Si、InAs、In 0.7 Ga 0.3 As、In 0.53 Ga 0.47 As、GaAs 和 Ge 用于 nMOS,Si 和 Ge 用于 pMOS)使用量子弹道传输和半经典蒙特卡罗的混合模拟进行了涵盖。电流-电压特性和性能指标,例如电容和有效驱动电流( $I_{eff}$ ) 考虑器件寄生元件。对于低功率操作,III-V nMOS 可以提供良好的性能,而具有不同源极/漏极尖端设计的 Gen n- 和 pMOS 可以在从低功率到高性能操作方面提供优于 Si 的性能优势。CMOS 基准测试结果 $I_{eff}$ 还针对 n- 和 pMOS(Si CMOS、III-V 混合 CMOS、Ge 混合 CMOS 和锗CMOS)。最后进行敏感性分析 $I_{eff}$ 寄生电阻( $R_{SD}$ ) 和接触电阻率 ( ${\boldsymbol{\rho }} _{c}$ )。新型通道材料可以放松 $R_{SD}$ ${\boldsymbol{\rho }} _{c}$ 要求匹配 $I_{eff}$ Si参考的性能。实验的综合文献综述 ${\boldsymbol{\rho }} _{c}$ 还介绍了新材料,以讨论材料依赖的影响 $R_{SD}$ .
更新日期:2020-01-01
down
wechat
bug