Comprehensive channel material benchmarking for n- and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In_0.7Ga_0.3As, In_0.53Ga_0.47As, GaAs, and Ge for nMOS, Si and Ge for pMOS) are covered using hybrid simulation of quantum ballistic transport and semi-classical Monte Carlo. Current-voltage characteristics and performance metrics such as the capacitance and effective drive current ( $I_{eff}$ ) are explored considering device parasitic components. For low power operation, III-V nMOS may deliver good performance while Ge n- and pMOS with different source/drain tip designs may give performance advantage over Si from low power to high performance operations. CMOS benchmarking results for $I_{eff}$ , capacitance, and switching energy vs. delay (for gate capacitance loading vs. interconnect wire capacitance loading) are also presented for various homogeneous and hybrid combinations of n- and pMOS (Si CMOS, III-V hybrid CMOS, Ge hybrid CMOS, and Ge CMOS). Finally, sensitivity analysis is performed for $I_{eff}$ on the parasitic resistance ( $R_{SD}$ ) and contact resistivity ( ${\boldsymbol{\rho }} _{c}$ ). Novel channel materials may relax the $R_{SD}$ and ${\boldsymbol{\rho }} _{c}$ requirements to match the $I_{eff}$ performance of Si reference. Comprehensive literature reviews of experimental ${\boldsymbol{\rho }} _{c}$ ’s of novel materials are also presented to discuss the effect of material-dependent $R_{SD}$ .

中文翻译：

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考虑到量子传输和载流子散射效应的综合 n 和 pMOSFET 沟道材料基准测试和 CMOS 性能指标分析

考虑到量子传输和载流子散射的影响，对 n- 和 pMOS 进行了全面的沟道材料基准测试。各种沟道材料选项（Si、InAs、In _0.7 Ga _0.3 As、In _0.53 Ga _0.47 As、GaAs 和 Ge 用于 nMOS，Si 和 Ge 用于 pMOS）使用量子弹道传输和半经典蒙特卡罗的混合模拟进行了涵盖。电流-电压特性和性能指标，例如电容和有效驱动电流（ $I_{eff}$ ) 考虑器件寄生元件。对于低功率操作，III-V nMOS 可以提供良好的性能，而具有不同源极/漏极尖端设计的 Gen n- 和 pMOS 可以在从低功率到高性能操作方面提供优于 Si 的性能优势。CMOS 基准测试结果 $I_{eff}$ 还针对 n- 和 pMOS（Si CMOS、III-V 混合 CMOS、Ge 混合 CMOS 和锗CMOS）。最后进行敏感性分析 $I_{eff}$ 寄生电阻（ $R_{SD}$ ) 和接触电阻率 ( ${\boldsymbol{\rho }} _{c}$ ）。新型通道材料可以放松 $R_{SD}$ 和 ${\boldsymbol{\rho }} _{c}$ 要求匹配 $I_{eff}$ Si参考的性能。实验的综合文献综述 ${\boldsymbol{\rho }} _{c}$ 还介绍了新材料，以讨论材料依赖的影响 $R_{SD}$ .