This letter reports the polymer passivation of field plated lateral $\beta $ -Ga₂ O₃ MOSFETs with significant improvement in the breakdown voltages as compared to non-passivated devices. We show consistent results of higher breakdown voltages in passivated devices as compared to non-passivated devices for MOSFETs with $\text{L}_{\textit {gd}}$ ranging from $30~\mu \text{m}$ to $70~\mu \text{m}$ and across two process runs. We obtain a record high breakdown voltage of 6.72 kV for a MOSFET with $\text{L}_{\textit {gd}}= {40}\mu \text{m}$ giving an average field strength of 1.69 MVcm⁻¹. The peak drain current is $\sim ~3$ mA/mm for $\text{L}_{g}= {2}\mu \text{m}$ device with a gate source separation of $3~\mu \text{m}$ . The on-resistance for the device is, $\text{R}_{\textit {on}}= {13}\,\,\text{k}\Omega ^{.}$ mm, giving a power device Figure of Merit of 7.73 kWcm⁻². The $\text{R}_{\textit {on}}$ is high due to plasma induced damage of channel and access regions. The $\text{R}_{\textit {on}}$ and on-current density remain unchanged after passivation. The breakdown increases with $\text{L}_{\textit {gd}}$ up to 70 $\mu \text{m}$ , giving a maximum breakdown voltage of 8.03 kV.

中文翻译：

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具有聚合物钝化和 8.03 kV 击穿电压的场镀横向 Ga2O3 MOSFET

这封信报告了现场电镀横向的聚合物钝化 $\beta $ -Ga ₂ O ₃ MOSFET 与非钝化器件相比，击穿电压显着提高。我们展示了与 MOSFET 的非钝化器件相比，钝化器件中更高击穿电压的一致结果 $\text{L}_{\textit {gd}}$ 范围从 $30~\mu \text{m}$ 至 $70~\mu \text{m}$ 并跨越两个进程运行。我们为 MOSFET 获得了创纪录的 6.72 kV 击穿电压 $\text{L}_{\textit {gd}}= {40}\mu \text{m}$ 给出 1.69 MVcm ^-1的平均场强。峰值漏电流为 $\sim ~3$ 毫安/毫米 $\text{L}_{g}= {2}\mu \text{m}$ 具有栅极源极分离的器件 $3~\mu \text{m}$ . 器件的导通电阻为， $\text{R}_{\textit {on}}= {13}\,\,\text{k}\Omega ^{.}$ mm，给出了 7.73 kWcm ^-2的功率器件品质因数。这 $\text{R}_{\textit {on}}$ 由于等离子体引起的沟道和接入区损坏，因此较高。这 $\text{R}_{\textit {on}}$ 钝化后导通电流密度保持不变。细分增加 $\text{L}_{\textit {gd}}$ 最多 70 $\mu \text{m}$ ，最大击穿电压为 8.03 kV。