High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (< 120 °C). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 103 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 104 over 10,000 sec by introducing PMMA as the tunneling layer.

中文翻译：

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基于黑磷量子点作为电荷俘获层的非易失性有机晶体管存储器

高性能有机纳米浮栅晶体管存储器 (NFGTM) 具有低处理温度、可溶液处理层和具有高存储容量的电荷俘获介质的重要先决条件。我们通过简单的旋涂和低加工温度 (< 120 °C) 展示了使用黑磷量子点 (BPQD) 作为电荷俘获介质的有机 NFGTM。直径为 12.6 ± 1.5 nm 且量子限制带隙为~2.9 eV 的 BPQDs 具有良好的电荷俘获能力。该有机存储器件具有出色的存储性能，具有 61.3 V 的大存储窗口、103 次写-读-擦除-读循环耐力超过 180 次循环和超过 10,000 秒的可靠保留。此外，我们成功地将内存保持率提高到 ON/OFF 电流比 > 104 超过 10，