当前位置：
X-MOL 学术
›
J. Phys. Chem. C
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Differentiating the Electrical and Optoelectrical Properties of Oxysulfides La2Ta2MS2O8 (M = Zr, Ti) via Application of Pressure
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-05-22 , DOI: 10.1021/acs.jpcc.0c03231 Junxiu Liu 1 , Jian Chen 1 , Weiwei Li 1 , Hua Tian 1 , Xiaoliang Zhang 1 , Nana Li 1 , Jinyuan Yan 2 , Martin Kunz 2 , Bin Chen 1 , Hengzhong Zhang 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-05-22 , DOI: 10.1021/acs.jpcc.0c03231 Junxiu Liu 1 , Jian Chen 1 , Weiwei Li 1 , Hua Tian 1 , Xiaoliang Zhang 1 , Nana Li 1 , Jinyuan Yan 2 , Martin Kunz 2 , Bin Chen 1 , Hengzhong Zhang 1
Affiliation
|
The oxysulfides La2Ta2MS2O8 (M = Zr, Ti) form a new family of narrow-band-gap semiconductors that have a lot of potential for photocatalysis and optoelectronics. However, many of their fundamental properties are still unknown. Herein, we report their crystal structure evolution, electrical resistances, band gaps, and photocurrents under compression from near ambient pressure up to ∼50 GPa. Our results show that the orthorhombic phases of La2Ta2ZrS2O8 and La2Ta2TiS2O8 transform into two new high-pressure phases at ∼23 and 25 GPa, respectively. Although their band gaps show similar trends in variations with the pressure, the resistance of La2Ta2ZrS2O8 is ∼2–3 orders of magnitudes higher than that of La2Ta2TiS2O8. In addition, the former exhibits a sharp decrease with pressure after the phase transition, while the latter presents only a steady decrease with increasing pressure. This difference arises from their different responses in the carrier mobility under compression, which is related to their compressibility at high pressure (the bulk modulus of La2Ta2ZrS2O8 is 122.5 GPa and that of La2Ta2TiS2O8 is 132.6 GPa). Both the electrical conductivity and defect formation at high pressure can affect the photoelectric properties, making the La2Ta2TiS2O8 compound possess photocurrents superior to the La2Ta2ZrS2O8 one. The findings from this work show that the La2Ta2TiS2O8 compound is a better candidate than La2Ta2ZrS2O8 for developing applications in photocatalysis, photovoltaics, photoelectric devices, etc.
中文翻译：
通过施加压力来区分硫化氧La 2 Ta 2 MS 2 O 8（M = Zr，Ti）的电和光电性质
氧硫化物La 2 Ta 2 MS 2 O 8（M = Zr，Ti）形成了窄带隙半导体的新家族，这些窄带隙半导体在光催化和光电领域具有很大的潜力。但是，它们的许多基本特性仍然未知。在这里，我们报道了它们的晶体结构演变，电阻，带隙和在从接近环境压力到约50 GPa的压缩下的光电流。我们的结果表明，La 2 Ta 2 ZrS 2 O 8和La 2 Ta 2 TiS 2 O 8的正交相分别转变为约23 GPa和25 GPa的两个新高压相。尽管它们的带隙随压力变化趋势相似，但La 2 Ta 2 ZrS 2 O 8的电阻比La 2 Ta 2 TiS 2 O 8的电阻高约2-3个数量级。此外，前者在相变后随压力急剧下降，而后者仅随压力增加而稳定下降。这种差异是由于它们在压缩时对载流子迁移率的不同响应所致，这与它们在高压下的可压缩性（La 2 Ta 2的体积模量）有关。ZrS 2 O 8为122.5 GPa，而La 2 Ta 2 TiS 2 O 8的ZrS 2 O 8为132.6 GPa。高压下的电导率和缺陷形成都会影响光电性能，使得La 2 Ta 2 TiS 2 O 8化合物具有比La 2 Ta 2 ZrS 2 O 8更好的光电流。这项工作表明，香格里拉结果2的Ta 2的TiS 2 Ø 8化合物是更好的候选人比拉2Ta 2 ZrS 2 O 8用于光催化，光伏，光电器件等领域的开发应用。
更新日期：2020-07-09
中文翻译：
通过施加压力来区分硫化氧La 2 Ta 2 MS 2 O 8（M = Zr，Ti）的电和光电性质
氧硫化物La 2 Ta 2 MS 2 O 8（M = Zr，Ti）形成了窄带隙半导体的新家族，这些窄带隙半导体在光催化和光电领域具有很大的潜力。但是，它们的许多基本特性仍然未知。在这里，我们报道了它们的晶体结构演变，电阻，带隙和在从接近环境压力到约50 GPa的压缩下的光电流。我们的结果表明，La 2 Ta 2 ZrS 2 O 8和La 2 Ta 2 TiS 2 O 8的正交相分别转变为约23 GPa和25 GPa的两个新高压相。尽管它们的带隙随压力变化趋势相似，但La 2 Ta 2 ZrS 2 O 8的电阻比La 2 Ta 2 TiS 2 O 8的电阻高约2-3个数量级。此外，前者在相变后随压力急剧下降，而后者仅随压力增加而稳定下降。这种差异是由于它们在压缩时对载流子迁移率的不同响应所致，这与它们在高压下的可压缩性（La 2 Ta 2的体积模量）有关。ZrS 2 O 8为122.5 GPa，而La 2 Ta 2 TiS 2 O 8的ZrS 2 O 8为132.6 GPa。高压下的电导率和缺陷形成都会影响光电性能，使得La 2 Ta 2 TiS 2 O 8化合物具有比La 2 Ta 2 ZrS 2 O 8更好的光电流。这项工作表明，香格里拉结果2的Ta 2的TiS 2 Ø 8化合物是更好的候选人比拉2Ta 2 ZrS 2 O 8用于光催化，光伏，光电器件等领域的开发应用。
京公网安备 11010802027423号