Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy,Chemistry of Materials

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Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-05-22 , DOI: 10.1021/acs.chemmater.0c00949
Chang-Soo Lee _{1,

2} , Gangtae Jin _{1,

2} , Seung-Young Seo _{1,

2} , Juho Kim _{1,

2} , Cheolhee Han _{1,

2} , Min Yeong Park _{1,

2} , Heonsu Ahn _{1,

2} , Suk-Ho Lee _{1,

2} , Soonyoung Cha ₁ , Moon-Ho Jo _{1,

2,

3}

Affiliation

Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS_2xSe_2(1–x) ML growth, where the alloying degree, x, is either continuously or discretely directed on the MLs in the entire range of 0 ≤ x ≤ 1. With this, on-ML band gap modulation is accomplished in the forms of either graded or discrete intra-ML junctions, leading to atomically thin multispectral photodetectors by a spatially resolved manner at the nanoscales.

中文翻译：

金属有机气相外延在范德华半导体单分子层内的编程带隙调制

范德华（vdW）半导体单层（ML）内的编程合金化是通过金属有机气相外延实现的。具体来说，通过精确控制单晶WS _{2 x} Se _{2（1- x）} ML生长过程中的延时蒸汽压，可以证明两种版本的ML合金化，其中合金化度x可以连续或离散定向上在0≤的整个范围内大联盟X ≤1。由此，上-ML带隙调制在任一分级或离散帧内ML结的形式来实现，由在空间上分辨的方式导致原子级薄的多光谱光探测器在纳米级。

更新日期：2020-06-23

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