ABSTRACT A non-lead electronic sample with chemical composition Bi(Ni2/3V1/3)O3 (BNV) has been fabricated via a conventional ceramic technology. The resistive, capacitive and conducting properties of the specimen are examined experimentally. The formation of the sample with orthorhombic crystal system is ensured through X-Ray diffraction spectrum. Detailed analysis of the temperature-frequency dependent dielectric properties affirms the fabricated specimen as a dielectric. The conductivity study gives information about the nature and conduction mechanism of the fabricated dielectric. The impedance spectroscopic technique reveals the role of grain and grain boundaries on the capacitive and resistive properties of the sample. The current density based electric field characteristics show that the sample has low leakage current density (1.2 × 10−9 A/cm2). This dielectric component entails high dielectric permittivity (98 × 102), lower loss (8) and excellent excitation response to an electric field, thus it props up to be a potential component in different high-temperature industrial applications.

中文翻译：

---

电子材料介电、阻抗、电性能分析：Bi(Ni2/3v1/3)O3

摘要 化学成分为 Bi(Ni2/3V1/3)O3 (BNV) 的无铅电子样品已通过传统陶瓷技术制造。通过实验检查样品的电阻、电容和导电特性。通过X射线衍射光谱确保形成具有正交晶系的样品。温度-频率相关介电特性的详细分析证实了制造的样品是电介质。电导率研究提供了有关制造的电介质的性质和传导机制的信息。阻抗光谱技术揭示了晶粒和晶界对样品电容和电阻特性的作用。基于电流密度的电场特性表明样品具有低漏电流密度 (1. 2 × 10−9 A/cm2)。这种介电元件具有高介电常数 (98 × 102)、较低的损耗 (8) 和对电场的出色激发响应，因此它是不同高温工业应用中的潜在元件。