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Silicon phthalocyanine: Vapor pressure and photovoltaic properties
Synthetic Metals ( IF 4.0 ) Pub Date : 2020-08-01 , DOI: 10.1016/j.synthmet.2020.116398
Nikolay M. Lazarev , Boris I. Petrov , Mikhail N. Bochkarev , Alla V. Arapova , Andrei A. Kukinov , Anton V. Cherkasov

Abstract The basic physicochemical properties and molecular structure of bis-(thrimethylsiloxy). phthalocyaninato silicon [SiPc(OSiMe3)2] are investigated. The temperature of melting of this complex was measured by the DSC method in the temperature interval 20–520 °C (Tm =497 °C). Thermogravimetric analysis data showed mass loss occurs in the temperature range 275−500 °C. The mass loss in this temperature range is 96 %. Mass spectrometric studies of the composition of the gaseous phase of [SiPc(OSiMe3)2] was performed in the temperature range up to 450 °C. It was found that the complex is sublimated in monomeric form. The vapor pressure of the compound was determined as a function of temperature by the Knudsen effusion method. Based on the data obtained, the thermodynamic parameters of the sublimation process are calculated. The X-ray diffraction study revealed that molecular geometric parameters of [SiPc(OSiMe3)2] are varied slightly upon changing of temperature. The photovoltaic properties of [SiPc(OSiMe3)2] studied with heterojunction solar cell of configuration of ITO/complex /C60/Bphen/Al. The operating characteristics of the cell turned out comparable with the characteristics of earlier designed analogues devices based on phthalocyanine complexes of Cu, Zn and Sn.

中文翻译:

硅酞菁:蒸气压和光伏特性

摘要 双(三甲基甲硅烷氧基)的基本理化性质和分子结构。酞菁硅[SiPc(OSiMe3)2]进行了研究。该配合物的熔化温度通过 DSC 方法在 20-520°C 的温度区间 (Tm = 497°C) 测量。热重分析数据显示质量损失发生在 275-500 °C 的温度范围内。该温度范围内的质量损失为 96%。[SiPc(OSiMe3)2] 气相组成的质谱研究在高达 450 °C 的温度范围内进行。发现复合物以单体形式升华。化合物的蒸气压通过 Knudsen 渗出法测定为温度的函数。根据获得的数据,计算升华过程的热力学参数。X 射线衍射研究表明 [SiPc(OSiMe3)2] 的分子几何参数随温度的变化而略有变化。[SiPc(OSiMe3)2] 的光伏特性与 ITO/复合物 /C60/Bphen/Al 配置的异质结太阳能电池研究。结果表明,该电池的工作特性与早期设计的基于 Cu、Zn 和 Sn 酞菁配合物的类似设备的特性相当。
更新日期:2020-08-01
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