Abstract Nanoscale 2 dimensional (2D) heterostructures based on zigzag graphene nanoribbons (ZGNRs) anti-symmetrically decorated with boron nitride (BN), are proposed as resonant tunneling diodes (RTD). Boron nitride has been utilized to decorate two edges of zigzag graphene nanoribbons in order to create required bandgap difference for constructing double barrier quantum well heterostructure. Nonequilibrium Green's function (NEGF) method including tight-binding (TB) Hamiltonian is employed to obtain transmission versus energy (T-E) curves and current versus bias voltage (I-V) characteristics of proposed heterostructures. Effect of structural parameters on the I-V characteristic is investigated. Proposed RTDs clearly show negative differential resistance (NDR) behavior in their I-V characteristic. Moreover, it is shown that the NDR behavior of proposed heterostructures can be precisely tuned by modulating structural dimensions.

中文翻译：

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基于 BN 反对称装饰的锯齿形石墨烯纳米带的纳米级异质结构中的负微分电阻

摘要 基于锯齿形石墨烯纳米带 (ZGNRs) 的纳米级二维 (2D) 异质结构被氮化硼 (BN) 反对称装饰，被提议用作谐振隧道二极管 (RTD)。氮化硼已被用于装饰锯齿形石墨烯纳米带的两个边缘，以产生构建双势垒量子阱异质结构所需的带隙差。采用包括紧束缚 (TB) 哈密顿量的非平衡格林函数 (NEGF) 方法来获得所提出的异质结构的传输与能量 (TE) 曲线和电流与偏置电压 (IV) 特性。研究了结构参数对IV特性的影响。提议的 RTD 在其 IV 特性中清楚地显示出负微分电阻 (NDR) 行为。而且，