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Stability of zinc nitride thin-film transistors under positive and negative bias stress
Solid-State Electronics ( IF 1.4 ) Pub Date : 2020-05-22 , DOI: 10.1016/j.sse.2020.107841
Miguel A. Dominguez , Jose Luis Pau , Andrés Redondo-Cubero

In this work, the electrical stability of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) under negative bias stress (NBS) and positive bias stress (PBS) is presented. The Zn3N2 TFTs were fabricated on plastic substrates. Spin-on glass was used as gate dielectric. The threshold voltage shift (ΔVT) and its recovery are analyzed during a long stress time and after a period of rest. The hysteresis of the transfer characteristics after the electrical stress is also analyzed. In order to explain the mechanism of instability in the Zn3N2 TFTs, MOS capacitors were fabricated and characterized under NBS and PBS. The behavior exhibited in MOS capacitors under NBS and PBS, is in agreement with the ΔVT exhibited in the Zn3N2 TFTs under NBS and PBS, respectively.



中文翻译:

正负偏置应力下氮化锌薄膜晶体管的稳定性

在这项工作中,提出了在负偏压(NBS)和正偏压(PBS)下氮化锌(Zn 3 N 2)薄膜晶体管(TFT)的电稳定性。Zn 3 N 2 TFT制造在塑料基板上。旋涂玻璃用作栅极电介质。阈值电压漂移(ΔV Ť)及其恢复过程中长的应力时间和休息一段时间后,进行了分析。还分析了电应力作用后的传递特性滞后现象。为了解释Zn 3 N 2中不稳定性的机理在NBS和PBS下制造TFT和MOS电容器并对其进行表征。在NBS和PBS下MOS电容器表现出的行为,是在协议与ΔV Ť在锌表现出3 Ñ 2层分别NBS和PBS,下的TFT。

更新日期:2020-05-22
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