In this work, the electrical stability of zinc nitride (Zn₃N₂) Thin-film Transistors (TFTs) under negative bias stress (NBS) and positive bias stress (PBS) is presented. The Zn₃N₂ TFTs were fabricated on plastic substrates. Spin-on glass was used as gate dielectric. The threshold voltage shift (ΔV_T) and its recovery are analyzed during a long stress time and after a period of rest. The hysteresis of the transfer characteristics after the electrical stress is also analyzed. In order to explain the mechanism of instability in the Zn₃N₂ TFTs, MOS capacitors were fabricated and characterized under NBS and PBS. The behavior exhibited in MOS capacitors under NBS and PBS, is in agreement with the ΔV_T exhibited in the Zn₃N₂ TFTs under NBS and PBS, respectively.

在这项工作中，提出了在负偏压（NBS）和正偏压（PBS）下氮化锌（Zn ₃ N ₂）薄膜晶体管（TFT）的电稳定性。Zn ₃ N ₂ TFT制造在塑料基板上。旋涂玻璃用作栅极电介质。阈值电压漂移（ΔV _Ť）及其恢复过程中长的应力时间和休息一段时间后，进行了分析。还分析了电应力作用后的传递特性滞后现象。为了解释Zn ₃ N ₂中不稳定性的机理在NBS和PBS下制造TFT和MOS电容器并对其进行表征。在NBS和PBS下MOS电容器表现出的行为，是在协议与ΔV _Ť在锌表现出₃ Ñ _2层分别NBS和PBS，下的TFT。