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Micro-strain effect on electronic properties in graphene induced by silver nanowires
Physica E: Low-dimensional Systems and Nanostructures ( IF 2.9 ) Pub Date : 2020-05-21 , DOI: 10.1016/j.physe.2020.114203
Mohd Mustaqim Rosli , Tengku Hasnan Tengku Abdul Aziz , Ahmad Rifqi Md Zain , Nabilah Alias , Nurul Ain Abd Malek , Nur Adliha Abdullah , Siti Khatijah Md Saad , Akrajas Ali Umar

Strain in the lattice has a profound effect on the electrical and optoelectronic properties of the material. Here we demonstrate the extent effect of micro-strain applied to graphene, induced by silver nanowires (AgNWs), on its lattice and electronic properties. In the typical process, we found that the micro-strain effect has critically expanded the lattice carbon-carbon bond length as a dramatic red-shift in the Raman main character of graphene observed. For example, the G and 2D band vibration mode of graphene shifts as high as Δ11.31 and Δ13.47 cm−1, respectively, from 1593.67 to 2687.46 cm−1 in unstrained graphene to 1583.36 and 2673.99 cm−1 for graphene under micro-strain, induced by AgNWs with density 5 wire/100 μm2. Raman spectra indicate that the shifting value is dependable on the distributed nanowire density. XPS analysis results further verify that the changes in bond length directly cause a strong modification in its electronic state, hence altering the electronic properties. Enhanced performance of electrical and optoelectronic properties is expected from this micro-strained graphene system.



中文翻译:

银纳米线在石墨烯中的微应变效应对电子性能的影响

晶格中的应变对材料的电和光电性能具有深远的影响。在这里,我们展示了由银纳米线(AgNWs)诱导的应用于石墨烯的微应变对其晶格和电子性能的程度影响。在典型过程中,我们发现,微应变效应已极大地扩展了晶格碳-碳键的长度,这是观察到的石墨烯拉曼主要特征的剧烈红移。例如,石墨烯移位高达Δ11.31和Δ13.47厘米的G和2D带振动模式-1分别从1593.67至2687.46厘米-1在无应变石墨烯1583.36和2673.99厘米-1下微石墨烯-应变,通过诱导与AgNWs密度5线/ 100微米2。拉曼光谱表明位移值取决于分布的纳米线密度。XPS分析结果进一步证明,键长的变化直接导致其电子状态发生强烈变化,从而改变了电子性能。这种微应变石墨烯系统有望提高电学和光电学性能。

更新日期:2020-05-21
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