Strain in the lattice has a profound effect on the electrical and optoelectronic properties of the material. Here we demonstrate the extent effect of micro-strain applied to graphene, induced by silver nanowires (AgNWs), on its lattice and electronic properties. In the typical process, we found that the micro-strain effect has critically expanded the lattice carbon-carbon bond length as a dramatic red-shift in the Raman main character of graphene observed. For example, the G and 2D band vibration mode of graphene shifts as high as Δ11.31 and Δ13.47 cm⁻¹, respectively, from 1593.67 to 2687.46 cm⁻¹ in unstrained graphene to 1583.36 and 2673.99 cm⁻¹ for graphene under micro-strain, induced by AgNWs with density 5 wire/100 μm². Raman spectra indicate that the shifting value is dependable on the distributed nanowire density. XPS analysis results further verify that the changes in bond length directly cause a strong modification in its electronic state, hence altering the electronic properties. Enhanced performance of electrical and optoelectronic properties is expected from this micro-strained graphene system.

晶格中的应变对材料的电和光电性能具有深远的影响。在这里，我们展示了由银纳米线（AgNWs）诱导的应用于石墨烯的微应变对其晶格和电子性能的程度影响。在典型过程中，我们发现，微应变效应已极大地扩展了晶格碳-碳键的长度，这是观察到的石墨烯拉曼主要特征的剧烈红移。例如，石墨烯移位高达Δ11.31和Δ13.47厘米的G和2D带振动模式^-1分别从1593.67至2687.46厘米^-1在无应变石墨烯1583.36和2673.99厘米^-1下微石墨烯-应变，通过诱导与AgNWs密度5线/ 100微米²。拉曼光谱表明位移值取决于分布的纳米线密度。XPS分析结果进一步证明，键长的变化直接导致其电子状态发生强烈变化，从而改变了电子性能。这种微应变石墨烯系统有望提高电学和光电学性能。