当前位置: X-MOL 学术Mater. Sci. Semicond. Proc. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Self-powered broadband photodetection using PbS decorated ZnO nanorods/reduced graphene oxide junction
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.mssp.2020.105165
Nitumoni Deka , Pinak Chakraborty , Dulal Chandra Patra , Saurab Dhar , Suvra Prakash Mondal

Abstract Vertically aligned ZnO nanorods (NRs) were grown on fluorine doped tin oxide (FTO) coated glass substrates using hydrothermal method. Self-powered broadband photodetector was fabricated with PbS decorated ZnO NRs and reduced graphene oxide (RGO) junction. ZnO NRs/PbS/RGO device demonstrated significant photocurrent over broad spectral range 350–700 nm. Our photodetector showed maximum external quantum efficiency (EQE) ~78%, responsivity R λ ~0.25A/W and detectivity ( D λ ) ~82944.55Hz1/2/W at 400 nm under zero bias. The transient photoresponse of the device exhibited fast response (~65 ms) and recovery time (~74 ms). Such PbS/ZnO NRs p-n heterojunction also demonstrated photovoltaic properties with open circuit voltage (VOC) ~ 0.27 V, short circuit current (JSC) ~1.03 mA/cm2 and power conversion efficiency (PEC) ~0.73% under illumination of white light of intensity 100 mW/cm2.

中文翻译:

使用 PbS 装饰的 ZnO 纳米棒/还原氧化石墨烯结的自供电宽带光电检测

摘要 使用水热法在掺氟氧化锡 (FTO) 涂层的玻璃基板上生长垂直排列的 ZnO 纳米棒 (NRs)。自供电宽带光电探测器由 PbS 装饰的 ZnO NRs 和还原氧化石墨烯 (RGO) 结制成。ZnO NRs/PbS​​/RGO 器件在 350-700 nm 的宽光谱范围内表现出显着的光电流。我们的光电探测器在零偏压下在 400 nm 处显示出最大外量子效率 (EQE) ~78%、响应率 R λ ~0.25A/W 和探测率 (D λ) ~82944.55Hz1/2/W。该器件的瞬态光响应表现出快速响应 (~65 ms) 和恢复时间 (~74 ms)。这种 PbS/ZnO NRs pn 异质结也表现出光伏特性,开路电压 (VOC) ~ 0.27 V、短路电流 (JSC) ~1.03 mA/cm2 和功率转换效率 (PEC) ~0。
更新日期:2020-11-01
down
wechat
bug