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Enhanced photoelectrochemical performance of Al-doped ZnO thin films prepared by co-spray technique
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.mssp.2020.105208
Y. Bouznit , A. Henni

Abstract Aluminium doped zinc oxide (AZO) films were achieved using co-spray method. Different techniques including UV–Visible (UV–Vis), X-ray diffraction (XRD), electrochemical impedance spectroscopy (EIS), Fourier transform infrared (FTIR) and photoelectrochemical (PEC) were used to characterize the obtained films. XRD indicated that all films exhibited single-phase ZnO hexagonal Wurtzite structure. AZO films showed a transparency more than 80% in the visible region with direct optical band gap ranging between 3.24 and 3.28 eV. A broad absorption band due to the stretching vibration of Zn–O bond located at 410 cm−1 was observed for all samples. In the high frequency region, all EIS spectra have only one single half-circle and the diameter decreases in the presence of a specific amount of Al (2–4%). The values of the exponent αCPE from EIS results indicated that ZnO:Al films presented a good homogeneity and smoothness. PEC study indicated that the film generates maximum photocurrents up to 1.2 μA/cm2 for a doping level of 2%.

中文翻译:

共喷涂技术制备的Al掺杂ZnO薄膜的光电化学性能增强

摘要 采用共喷涂法制备了铝掺杂氧化锌(AZO)薄膜。使用不同的技术,包括紫外-可见光(UV-Vis)、X 射线衍射(XRD)、电化学阻抗谱(EIS)、傅里叶变换红外(FTIR)和光电化学(PEC)来表征所获得的薄膜。XRD 表明所有薄膜都表现出单相 ZnO 六方纤锌矿结构。AZO 薄膜在可见光区的透明度超过 80%,直接光学带隙范围在 3.24 到 3.28 eV 之间。由于位于 410 cm-1 处的 Zn-O 键的伸缩振动,所有样品均观察到宽吸收带。在高频区域,所有 EIS 光谱只有一个半圆,并且在特定量的 Al (2-4%) 存在时直径会减小。EIS 结果的指数αCPE 值表明ZnO:Al 薄膜呈现出良好的均匀性和光滑度。PEC 研究表明,对于 2% 的掺杂水平,该薄膜可产生高达 1.2 μA/cm2 的最大光电流。
更新日期:2020-11-01
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