We design a thermal rectifier based on near-field thermal radiation between a p-type lightly doped silicon bulk (p-LDSi) and a Fabry-Perot (F-P) cavity, made of alternating metal films and p-LDSi films on metal substrate. Our results show that the introduction of F-P cavity arouses markedly near-field thermal rectification ratio owing to the selective emittance and absorption. Significantly, the performance of the designed rectifier exceeds the simple rectifier between the p-LDSi substrate and the metal substrate. Meanwhile a good rectification ratio can still be achieved at a large vacuum gap. Furthermore, in order to solve the multidimensional optimization difficulties often encountered in designing thermal rectifier devices, the sequential quadratic programming (SQP) is employed to build the optimal reconstruction scheme by solving the inverse problem for the thermal rectifier. This paper exploits a new lane to improve the performance of thermal rectifiers, and may have wide applications in thermal management of microchip.

我们基于在p型轻掺杂硅体（p -LDSi）和Fabry-Perot（FP）腔之间的近场热辐射设计了一种热整流器，该结构由金属衬底上的交替金属膜和p -LDSi膜制成。我们的结果表明，由于选择性发射和吸收，FP腔的引入引起了近场热整流比的显着提高。显然，所设计整流器的性能超过了p之间的简单整流器。-LDSi衬底和金属衬底。同时，在较大的真空间隙下仍可获得良好的整流比。此外，为了解决在设计热整流器装置时经常遇到的多维优化难题，通过解决热整流器的逆问题，采用顺序二次规划（SQP）来建立最优的重构方案。本文探索了一条改善热整流器性能的新途径，并可能在微芯片的热管理中具有广泛的应用。