Abstract Electrical properties of Al/p-type Si/Al metal-semiconductor and Al/V2O5/p-type Si/Al metal–interfacial layer–semiconductor diodes with and without anodic surface passivation are investigated by the capacitance-voltage (C-V) and conductance-voltage (G/ω−V) characteristics. The measurements were performed at various voltages from −2 V to 2 V in the frequency range from 50 kHz to 1 MHz at room temperature and in the dark. The barrier height, concentration of acceptor atoms, and diffusion potential of these diodes were determined from the linear C−2-V plots. The barrier heights increase for the MS and MIS diodes with anodic surface passivation. Furthermore, the series resistance and interface state density of the diodes were obtained by the Hill-Coleman method and the Nicollian-Goetzberger method, respectively. It is found that the anodic passivation process has a positive effect on these parameters.

中文翻译：

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表面钝化对Al/p型Si/Al和Al/V2O5/p型Si/Al二极管电容-电压和电导-电压特性的影响

摘要 通过电容-电压 (CV) 和无阳极表面钝化的 Al/p 型 Si/Al 金属半导体和 Al/V2O5/p 型 Si/Al 金属-界面层-半导体二极管的电性能研究电导-电压 (G/ω-V) 特性。在室温和黑暗中，在 50 kHz 至 1 MHz 的频率范围内，在 -2 V 至 2 V 的各种电压下进行测量。这些二极管的势垒高度、受体原子浓度和扩散电位由线性 C-2-V 曲线确定。具有阳极表面钝化的 MS 和 MIS 二极管的势垒高度增加。此外，二极管的串联电阻和界面态密度分别通过 Hill-Coleman 方法和 Nicollian-Goetzberger 方法获得。