In recent low-power electronics industry, Tunnel field-effect transistors (TFETs) have shown the superior performance such as decreased leakage current and lower subthreshold slope (SS). Previously available research work have recognized the fact that the precise evaluation of linearity is critical in short channel devices. The linearity analysis of double gate vertical TFET using hetero-dielectric buried oxide (HDB) for high-frequency applications has been investigated in this paper. The aim of using double gate (DG), HDB and work-function engineering is to improve the linearity performance. This work comprises of the analysis of the linearity figure-of-merits in terms of third-order transconductance (g_m3), VIP₂, VIP₃, IMD₃, IIP₃ and 1-dB compression point.

在最近的低功率电子工业中，隧道场效应晶体管（TFET）已显示出卓越的性能，例如降低了漏电流和降低了亚阈值斜率（SS）。先前可用的研究工作已经认识到以下事实：对短通道设备而言，线性的精确评估至关重要。本文研究了在高频应用中使用异质电介质掩埋氧化物（HDB）的双栅极垂直TFET的线性分析。使用双门（DG），HDB和功函数工程的目的是提高线性性能。这项工作包括根据三阶跨导（g _{m 3}）VIP ₂分析线性品质因数， VIP ₃，IMD ₃，IIP ₃和1 dB压缩点。