In this work, (-2 0 1) β-Ga₂O₃ films are grown on GaN substrate by metal organic chemical vapor deposition (MOCVD). It is revealed that the β-Ga₂O₃ film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga₂O₃ film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga₂O₃ film and the β-Ga₂O₃/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga₂O₃ film. Moreover, the energy band structure of β-Ga₂O₃/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga₂O₃ films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga₂O₃/GaN heterostructures in microelectronic applications.

中文翻译：

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金属有机化学气相沉积法生长β-Ga2 O 3膜和β-Ga2 O 3 / GaN异质结构的研究

在这项工作中，（-2 0 1）的β-Ga ₂ ö _3层膜是通过金属有机化学气相沉积（MOCVD）生长的GaN衬底上。据透露，在的β-Ga ₂ ö ₃上的GaN膜生长具有优良的晶体质量，材料的均匀性和表面形态比普通异质外延的β-Ga的结果₂ ö ₃基于蓝宝石衬底上的膜。此外，外延的晶体质量之间的相关性的β-Ga ₂ ö ₃膜和的β-Ga ₂ ö ₃研究了/ GaN界面行为。透射电子显微术结果表明，该接口原子重构现象是有利的，以减轻失配应力，提高随后的β-Ga的晶体质量₂ ö ₃膜。此外，β-Ga中的能带结构₂ ö ₃获得/通过MOCVD GaN异质结构生长的通过X射线光电子能谱法和大的导带电子伏特0.89偏移的影响。这项工作的结果不仅令人信服地证明的优点的β-Ga _2个ö ₃薄膜生长的GaN基板上，但也显示MOCVD的极大的应用潜力的β-Ga ₂ ö ₃微电子应用中的/ GaN异质结构。