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Aspect Ratio Control of Copper Nanowire via Solution Process and Its Flexible Transparent Conductive Electrode Applications
Electronic Materials Letters ( IF 2.1 ) Pub Date : 2020-05-22 , DOI: 10.1007/s13391-020-00223-2
Sang-Soo Chee , Hyesoo Kim , Myungwoo Son , Moon-Ho Ham

Abstract

Controlling aspect ratio of copper (Cu) nanowire (NW) is a vital role to determine the conductivity at a high transmittance for the transparent conductive electrode application, but systemic studies on aspect ratio control of Cu NW have been still in early stages. Herein, we systemically explore the aspect ratio of Cu NW by varying solution process parameters including reaction time and the concentration of additives (Cu precursor, reducing agent, and capping agent). From optimized process parameters, we successfully synthesize Cu NWs showing the high aspect ratio of ~ 1570, which is relatively comparable than that of previous reports. We characterize the sheet resistance with different transmittances, and consequently achieve excellent sheet resistance of 46 Ω sq−1 at transmittance = 93%, similar to that of indium tin oxide-based electrodes. Obtained Cu NW films also show stable bending reliability with applying bending radius of 6.5 mm. Such remarkable performances are attributed to high aspect ratio of our Cu NWs, which lead to reduced junction resistance in films.

Graphic Abstract



中文翻译:

溶液法控制铜纳米线的长宽比及其柔性透明导电电极的应用

摘要

在透明导电电极应用中,控制铜(Cu)纳米线(NW)的纵横比对于确定高透射率的电导率至关重要,但是对Cu NW的纵横比控制的系统研究仍处于早期阶段。在这里,我们通过改变溶液工艺参数(包括反应时间和添加剂(Cu前体,还原剂和封端剂)的浓度)来系统地研究Cu NW的长宽比。通过优化的工艺参数,我们成功地合成了显示出约1570的高纵横比的Cu NW,这与以前的报道相对可比。我们表征了具有不同透射率的薄层电阻,因此获得了46Ωsq -1的优异薄层电阻在透射率= 93%时,类似于基于铟锡氧化物的电极。获得的Cu NW膜在施加6.5 mm的弯曲半径时也显示出稳定的弯曲可靠性。如此出色的性能归因于我们的铜纳米线的高长宽比,这导致了薄膜的结电阻降低。

图形摘要

更新日期:2020-05-22
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