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Modeling and design of an ultra low-power NEMS relays: application to logic gate inverters
Analog Integrated Circuits and Signal Processing ( IF 1.2 ) Pub Date : 2020-05-22 , DOI: 10.1007/s10470-020-01658-1
Hatem Samaali , Fehmi Najar , Amar Chaalane

In this work we propose a design based on a nanoelectromechanical relay acting as a logic gate inverter. The proposed inverter is made of a double cantilever nanobeam actuated by a fixed central electrode carrying the input signals. The static and dynamic behaviors of the ohmic nanoinverter gate are investigated using an electromechanical mathematical model that fully incorporates nonlinear form of the electrostatic force and the ohmic contact of the nanobeams’ tip with the fixed output electrode. The derived electromechanical model is used for electrical and energy analysis. Simulations are used to confirm the functionality of the inverter. The analysis of the switching energy showed very low power consumption compared to classical CMOS inverters. It is shown that the proposed inverter dissipates only 0.45 fJ to code a “1” logic-state and 0.023 fJ to code a “0” logic-state.



中文翻译:

超低功耗NEMS继电器的建模和设计:在逻辑门逆变器中的应用

在这项工作中,我们提出了一种基于纳米机电继电器作为逻辑门逆变器的设计。所提出的逆变器由双悬臂纳米束制成,该纳米束由携带输入信号的固定中心电极驱动。使用机电数学模型研究了欧姆纳米逆变器栅极的静态和动态行为,该模型完全融合了静电力的非线性形式以及纳米束尖端与固定输出电极的欧姆接触。导出的机电模型用于电和能量分析。仿真用于确认逆变器的功能。与传统的CMOS反相器相比,对开关能量的分析显示出非常低的功耗。结果表明,拟议的反相器仅耗散0.45 fJ的逻辑状态,编码为“ 1”和0。

更新日期:2020-05-22
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