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B5N5 monolayer: a room-temperature light element antiferromagnetic insulator
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-05-21 , DOI: 10.1039/d0na00270d
Dong Zhang 1, 2 , Qihua Xiong 3, 4 , Kai Chang 1, 2
Affiliation  

We demonstrate theoretically that an intrinsic antiferromagnetic phase exists in monolayer materials consisting of non-magnetic light atoms, and propose that B5N5 with a decorated bounce lattice is a thermodynamically stable two-dimensional antiferromagnetic insulator by performing state-of-the-art density functional theory calculations. The antiferromagnetic phase originates from spontaneous symmetry breaking at the nearly flat bands in the vicinity of the Fermi energy. The flat bands are formed by purely s–pz orbitals and are spin degenerate. A perpendicular electric field can remove the spin degeneracy and a prototype controllable dual spin filter with 100% spin polarization is proposed. Our proposal offers a possible two-dimensional atomically thick antiferromagnetic insulator.

中文翻译:


B5N5单层:室温轻元素反铁磁绝缘体



我们从理论上证明了由非磁性轻原子组成的单层材料中存在固有的反铁磁相,并通过执行最先进的技术提出带有装饰弹跳晶格的 B 5 N 5是一种热力学稳定的二维反铁磁绝缘体密度泛函理论计算。反铁磁相源于费米能附近近平带处的自发对称破缺。平带由纯 s-p z轨道形成,并且是自旋简并的。垂直电场可以消除自旋简并性,并提出了一种具有 100% 自旋极化的原型可控双自旋滤波器。我们的建议提供了一种可能的二维原子厚度反铁磁绝缘体。
更新日期:2020-05-21
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