Strain engineering is a natural route to control the electronic and optical properties of two-dimensional (2D) materials. Recently, 2D semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate–lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by $ \sim {40^ \circ } $ as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for an integrated opto-electronics and nano-photonics platform.

中文翻译：

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原子薄半导体中量子发射器发射轴的应变调整

应变工程是控制二维（2D）材料的电子和光学特性的自然途径。近来，二维半导体也被证明是引人入胜的，具有应变诱导的量子限制发射器的主体，这些发射器具有从主体半导体继承的独特的波谷特性。在这里，我们研究了嵌入范德华异质结构的单层二硒化钨中这种局部发射器发出的光的连续和可逆调谐。通过从铌酸镁铅-钛酸铅（PMN-PT）压电基板进行的应变传递，在发射器上施加双轴应变。通过在压电基板上施加电压，已证明了几个局部发射器的发射能量的有效调制，最高可达10 meV。此外，我们还发现发射轴旋转了当这些发射器上的双轴应变的大小发生变化时，\ \ sim {40 ^ \ circ} $。这些结果提高了使用所有电控设备的前景，其中可以利用弹性场设计2D主机中局部发射器的属性，以用于集成的光电和纳米光子平台。