In this study, we theoretically studied the enhancement of carrier injection by employing heterostructure layers before p-GaN in green light-emitting diodes. It is evident from the simulation results that improved carrier injection results in high internal quantum efficiency and light output power in the structures using heterostructures on the p-side. In comparison to conventional structure, reduced efficiency droop is observed suggesting promising high-performance green light-emitting diodes.

中文翻译：

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通过采用异质结构覆盖层减少绿色GaN基发光二极管的效率下降/下降

在这项研究中，我们在理论上研究了通过在绿色发光二极管中使用p-GaN之前的异质结构层来提高载流子注入的能力。从仿真结果可以明显看出，改进的载流子注入在使用p侧异质结构的结构中提高了内部量子效率和光输出功率。与传统结构相比，观察到降低的效率下降，表明有希望的高性能绿色发光二极管。