Abstract Ultra-nano-crystalline diamond (UNCD) thin films with average thickness ∼200 nm, were grown on n-type mirror polished silicon (100) substrates using microwave plasma enhanced chemical vapour deposition system in different gas (H2 - N2 - Ar - CH4) composition plasma atmospheres at 1200 W (2.45 GHz) and in a pressure of 120 Torr with plasma-temperature ∼475 °C. Raman spectroscopy was used for microstructural study and nano-indentation was used for Hardness/Young’s modulus study; whereas X-ray absorption near edge structure, X-ray photoelectron and ultraviolet photoemission spectroscopies were used for electronic structure of UNCD thin films. The hardness of the films is found to be ∼30 GPa, Young’s modulus ∼300 GPa and induced electron field emission, the turn on electric field, ETOE = 11 V/μm. All results show that the UNCD could be useful for different industrial semiconductor/optoelectronic devices and as flexible materials for thin film coating technology.

中文翻译：

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超纳米晶金刚石薄膜的微观结构和电子特性

摘要 使用微波等离子体增强化学气相沉积系统，在不同气体（H2 - N2 - Ar - CH4) 在 1200 W (2.45 GHz) 和 120 Torr 压力下组成等离子体气氛，等离子体温度约为 475 °C。拉曼光谱用于微观结构研究，纳米压痕用于硬度/杨氏模量研究；而X射线吸收近边缘结构，X射线光电子和紫外光发射光谱用于UNCD薄膜的电子结构。发现薄膜的硬度为~30 GPa，杨氏模量~300 GPa 和感应电子场发射，开启电场，ETOE = 11 V/μm。