Abstract

Transient liquid phase sintering (TLPS), which is a combined bonding technology of sintering and transient liquid phase bonding, is considered to be a promising sic. die attach material owing to its excellent mechanical properties and low cost. To prevent the oxidation problem, Ni is typically plated onto direct bonded copper and sic. chip. In this study, we investigated the Ni–Ni bonding by adapting TLPS method using Ni and Sn-58Bi. The bonding temperature and time were 220 °C and 60 min, respectively. In addition, the bonding atmosphere was maintained in air without bonding pressure. To confirm the bonding reliability, high-temperature storage test was conducted at 200 °C for 1000 h. With an increase in the remelting temperature to 271 °C, the bonding strength of the TLPS joint of 20 wt% Ni case was about 15 MPa. In addition, the bonding strength decreased by approximately 32% after the high-temperature storage test for 1000 h. In conclusion, Ni–Ni bonding was successfully achieved by the TLPS of Sn-58Bi with Ni.

Graphic Abstract

The high-heat endurance bonding between Ni to Ni was achieved by transient liquid phase sintering bonding using Ni and Sn-58Bi. By the sintering reaction between Ni, and the intermetallic reaction of Ni, Sn, and Bi, the remelting temperature increased from 139 to 271 °C. This bonding method can be applied in SiC die attachment technology.

中文翻译：

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Ni和Sn-58Bi的瞬时液相烧结对Ni-Ni键合组织和力学性能的影响

摘要

瞬态液相烧结（TLPS）是一种结合了烧结和瞬态液相粘结的结合技术，被认为是很有前途的。芯片连接材料具有出色的机械性能和低成本。为了防止氧化问题，通常将Ni镀到直接结合的铜和sic上。芯片。在这项研究中，我们通过使用Ni和Sn-58Bi的TLPS方法研究了Ni-Ni键。粘合温度和时间分别为220°C和60分钟。另外，在没有粘合压力的情况下将粘合气氛保持在空气中。为了确认粘合的可靠性，在200°C下进行了1000 h的高温存储测试。随着重熔温度升高至271°C，Ni含量为20 wt％的TLPS接头的结合强度约为15 MPa。此外，高温存储测试1000小时后，粘结强度降低了约32％。总之，Sn-58Bi与Ni的TLPS成功实现了Ni-Ni键。

图形摘要

通过使用Ni和Sn-58Bi的瞬时液相烧结结合来实现Ni与Ni之间的高耐热结合。通过Ni之间的烧结反应以及Ni，Sn和Bi的金属间反应，重熔温度从139℃升高到271℃。这种结合方法可以应用于SiC管芯附着技术。