The residence time effect of SiNx plasma atomic layer deposition (ALD) processes was investigated. The reactive species (Hx, NHy, SiHz) were analysed by a mass spectrometer. In the NH3 plasma step, a strong SiH4 peak was observed and is attributed to the desorption of SiH4 from the SiNx surface. A relatively low N/Si ratio of 1.16 was identified owing to the re-deposition of the desorbed SiH4. The re-deposition was decreased by reducing the residence time of reactants. The re-deposition species were quantitatively analysed using optical emission spectrometry, and the N/Si ratio increased nearly to the ideal stoichiometric value of 1.33.

中文翻译：

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使用三甲硅烷胺和 NH ₃等离子体的氮化硅原子层沉积工艺的自由基分析和停留时间效应

研究了 SiNx 等离子体原子层沉积 (ALD) 工艺的停留时间效应。通过质谱仪分析反应性物质（Hx、NHy、SiHz）。在 NH3 等离子体步骤中，观察到强 SiH4 峰，这归因于 SiH4 从 SiNx 表面解吸。由于解吸的 SiH4 的重新沉积，确定了相对较低的 N/Si 比为 1.16。通过减少反应物的停留时间来减少再沉积。使用光学发射光谱法对再沉积物质进行定量分析，N/Si 比率增加到接近理想的化学计量值 1.33。