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Transient Photovoltage Measurements on Perovskite Solar Cells with Varied Defect Concentrations and Inhomogeneous Recombination Rates
Small Methods ( IF 10.7 ) Pub Date : 2020-05-20 , DOI: 10.1002/smtd.202000290
Zi Shuai Wang 1, 2 , Firouzeh Ebadi 1 , Brian Carlsen 1 , Wallace C. H. Choy 2 , Wolfgang Tress 3
Affiliation  

In all kinds of solar cells, transient photovoltage (TPV) decay measurements have been used to determine charge carrier lifetimes and to quantify recombination processes and orders. However, in particular, for thin‐film devices with a high capacitance, the time constants observed in common TPV measurements do not describe recombination dynamics but RC (R: resistance, C: capacitance) times for charging the electrodes. This issue has been revisited for organic and perovskite solar cells in the recent literature. Here, these discussions are extended by analyzing a perovskite model system (Bi defects in Cs0.1FA0.9Pb(Br0.1I0.9)3 in which defect recombination can be tuned. It is found that TPV, intensity‐modulated photovoltage spectroscopy, and impedance spectroscopy yield the same time constants that do not describe recombination dynamics but are limited by the differential resistance of the diode and the geometric capacitance in common light intensity ranges (<1 sun). By employing numerical device simulations, it is found that low charge carrier mobility can furthermore limit the TPV time constants. In samples with spatially nonuniform recombination dynamics, two time constants are measured, which depend on the charge carrier generation profile that can be tuned by the wavelength of the incident light. In that case, numerical simulation provides insights into recombination and charge transport processes in the device.

中文翻译:

具有各种缺陷浓度和不均匀复合率的钙钛矿太阳能电池的瞬态光电压测量

在所有种类的太阳能电池中,瞬态光电压(TPV)衰减测量已用于确定载流子寿命并量化重组过程和顺序。但是,特别是对于具有高电容的薄膜器件,在普通TPV测量中观察到的时间常数并未描述复合动力学,而是描述了为电极充电的RCR:电阻,C:电容)时间。在最近的文献中,对于有机和钙钛矿太阳能电池已经重新审视了这个问题。在此,通过讨论钙钛矿模型系统(Cs 0.1 FA 0.9 Pb(Br 0.1 I 0.93中的Bi缺陷)扩展了这些讨论。其中可以调整缺陷重组。发现TPV,强度调制光电压光谱和阻抗光谱产生相同的时间常数,该常数不描述重组动力学,但受二极管的差分电阻和普通光强度范围内(<1 sun)的几何电容的限制。通过使用数值设备仿真,发现低载流子迁移率还可以限制TPV时间常数。在具有空间不均匀重组动力学的样品中,测量了两个时间常数,这取决于可以通过入射光的波长调整的电荷载流子产生曲线。在这种情况下,数值模拟可提供对器件中复合和电荷传输过程的深入了解。
更新日期:2020-05-20
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