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Omnidirectional Stretchable Inorganic‐Material‐Based Electronics with Enhanced Performance
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-20 , DOI: 10.1002/aelm.202000058 Yogeenth Kumaresan 1 , Hyeonghun Kim 2 , Yusin Pak 3 , Praveen Kumar Poola 2 , Ryeri Lee 2 , Namsoo Lim 2 , Heung Cho Ko 2 , Gun Young Jung 2 , Ravinder Dahiya 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-20 , DOI: 10.1002/aelm.202000058 Yogeenth Kumaresan 1 , Hyeonghun Kim 2 , Yusin Pak 3 , Praveen Kumar Poola 2 , Ryeri Lee 2 , Namsoo Lim 2 , Heung Cho Ko 2 , Gun Young Jung 2 , Ravinder Dahiya 1
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Inorganic material‐based devices are well known for their high performance, excellent stability, and hence suitability for fast computation and communication. But their nonflexibility and nonstretchability often hinder their application in several emerging areas where conformability with irregular 3D surfaces is required in addition to the high performance. Herein, with honeycomb like patterns, the omnidirectional stretchability and conformability of inorganic material‐based device are demonstrated without sacrificing the performance. The simple method presented here facilitates the transfer of patterned inorganic material‐based devices from rigid poly(methyl methacrylate) (PMMA)/glass substrate onto flexible/stretchable substrate such as polydimethylsiloxane simply by placing a water droplet at the PMMA/glass interface. As a proof of concept, the intrinsically brittle indium–gallium–zinc oxide (IGZO)‐based stretchable photodetector devices are fabricated. These devices can be stretched up to 10% without performance degradation, which is a significant improvement considering the less than ≈1% fracture limit of IGZO. With Au decoration, these devices show 127‐fold higher responsivity (295.3 mA W−1) than planar IGZO devices. The higher fracture strain together with the omnidirectional stretchability underpinned by the honeycomb pattern could allow presented devices to conform to complex hemispherical surfaces such as the human eyes, thus showing significant potential for future high‐performance stretchable electronics.
中文翻译：
具有增强性能的全向可拉伸无机材料电子
无机材料基设备以其高性能，出色的稳定性而闻名，因此适合快速计算和通信。但是，它们的非柔韧性和不可拉伸性通常会阻碍其在一些新兴领域的应用，这些领域除了高性能之外还需要与不规则3D表面保持一致。在此，通过蜂窝状图案，在不牺牲性能的情况下演示了基于无机材料的设备的全向拉伸性和顺应性。此处介绍的简单方法只需将水滴放在PMMA /玻璃界面上，即可将图案化的基于无机材料的器件从硬质聚甲基丙烯酸甲酯（PMMA）/玻璃基板转移到柔性/可拉伸基板（例如聚二甲基硅氧烷）上。作为概念证明，制造了基于本征脆性的铟镓锌氧化物（IGZO）的可拉伸光电探测器。这些器件可以拉伸至10％，而不会降低性能，考虑到IGZO的断裂极限小于≈1％，这是一项重大改进。这些设备采用Au装饰，显示出高127倍的响应度（295.3 mA W-1）比平面IGZO装置。较高的断裂应变以及蜂窝状结构所支撑的全向拉伸性可以使所展示的设备适应复杂的半球形表面（如人眼），从而为未来的高性能可拉伸电子设备显示出巨大的潜力。
更新日期：2020-07-13
中文翻译：
具有增强性能的全向可拉伸无机材料电子
无机材料基设备以其高性能，出色的稳定性而闻名，因此适合快速计算和通信。但是，它们的非柔韧性和不可拉伸性通常会阻碍其在一些新兴领域的应用，这些领域除了高性能之外还需要与不规则3D表面保持一致。在此，通过蜂窝状图案，在不牺牲性能的情况下演示了基于无机材料的设备的全向拉伸性和顺应性。此处介绍的简单方法只需将水滴放在PMMA /玻璃界面上，即可将图案化的基于无机材料的器件从硬质聚甲基丙烯酸甲酯（PMMA）/玻璃基板转移到柔性/可拉伸基板（例如聚二甲基硅氧烷）上。作为概念证明，制造了基于本征脆性的铟镓锌氧化物（IGZO）的可拉伸光电探测器。这些器件可以拉伸至10％，而不会降低性能，考虑到IGZO的断裂极限小于≈1％，这是一项重大改进。这些设备采用Au装饰，显示出高127倍的响应度（295.3 mA W-1）比平面IGZO装置。较高的断裂应变以及蜂窝状结构所支撑的全向拉伸性可以使所展示的设备适应复杂的半球形表面（如人眼），从而为未来的高性能可拉伸电子设备显示出巨大的潜力。
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