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Basic relationships for Hall half-plane structures with multiple extended contacts on the boundary: Applications to the extraction of physical parameters and optimization of graphene and vertical Hall devices
Solid-State Electronics ( IF 1.4 ) Pub Date : 2020-05-20 , DOI: 10.1016/j.sse.2020.107837
Dorel Homentcovschi , Bruce T. Murray

The basic relationships for a Hall plate with N non-symmetric contacts placed in an arbitrary magnetic field are a set of N-1 relationships that are necessary and sufficient for the existence of a complex electrostatic potential function. By the application of the boundary conditions, they turn into a linear system of N-1 compatibility conditions involving the terminal voltages and currents. The construction of the basic relationships requires the positions of the contact extremities on the real axis of the canonical domain (the upper half-plane) as well as the electric and magnetic parameters of the Hall device. The conduction and resistance matrices can be obtained easily from the basic relationships. They give an effective method for predicting the performance of both horizontal and vertical Hall effect devices and provide a useful method for designing these types of planar devices.



中文翻译:

边界上具有多个扩展触点的霍尔半平面结构的基本关系:在物理参数的提取以及石墨烯和垂直霍尔器件的优化中的应用

在任意磁场中具有N个非对称触点的霍尔板的基本关系ñ--1个对于复杂的静电势函数的存在是必要和充分的关系。通过应用边界条件,它们变成了一个线性系统ñ--1个涉及端子电压和电流的兼容性条件。基本关系的构建需要接触端点在规范域(上半平面)的实轴上的位置以及霍尔器件的电磁参数。从基本关系可以很容易地获得导电和电阻矩阵。它们为预测水平和垂直霍尔效应器件的性能提供了一种有效的方法,并为设计这些类型的平面器件提供了一种有用的方法。

更新日期:2020-05-20
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