In this report the pursuance of Fe concentration on the structural, microstructural, optical, transport and magnetic properties of Indium Oxide (In${}_2$O${}_3$) have been systematically investigated. Rietveld refined X-ray diffraction, high resolution transmittance electron microscope (HRTEM), selected area electron diffraction (SAED) and Raman patterns substantiated the pure single phase of In${}_{2-x}$Fe${}_x$O${}_3$ (x = 0.0-0.4) nanocrystalline cubic bixbyite structure. The average crystallite (grain) size is found to be decreased from $\sim$ 38.3 to $\sim$ 27.2 nm with x = 0.0 to 0.4 Fe doping and average particle size of the samples for x = 0.0 and x = 0.2 are measured $\sim$ 49 nm and $\sim$ 41 nm respectively from TEM, while the optical band gap stays around $\sim$ 3.7 eV for each sample. The electrical resistivity is observed to increase with increase in Fe doping which is concomitant with the decrease in oxygen vacancy observed from X-ray photoelectron spectroscopy (XPS) study and photoluminescence (PL). The samples with x = 0.0, 0.01, and 0.2 showed the normal semiconducting behavior and well fitted with thermal activation conduction band (TACB), nearest neighbor hopping (NNH) and Mott-variable range hopping (Mott-VRH) models. The magnetic behavior has a concurrence with the bound magnetic polaron (BMP) model in the vicinity of oxygen vacancies.

在本报告中，根据铁浓度对氧化铟（In）的结构，微结构，光学，传输和磁性的追求${}_2$Ø${}_3$）已经过系统地调查。Rietveld精制的X射线衍射，高分辨率透射电子显微镜（HRTEM），选择区域电子衍射（SAED）和拉曼图案证实了In的纯单相${}_{2-X}$铁${}_X$Ø${}_3$（x = 0.0-0.4）纳米晶立方方铁矿结构。发现平均晶粒（晶粒）尺寸从$〜$ 38.3至 $〜$ x = 0.0到0.4 Fe掺杂时为27.2 nm，测量x = 0.0和x = 0.2时样品的平均粒径 $〜$ 49 nm和 $〜$ TEM分别为41 nm，而光学带隙保持在 $〜$每个样品3.7 eV。观察到电阻率随Fe掺杂的增加而增加，这与从X射线光电子能谱（XPS）和光致发光（PL）研究中观察到的氧空位的减少相伴。x = 0.0、0.01和0.2的样本显示出正常的半导体行为，并且很好地拟合了热激活导带（TACB），最近邻跳频（NNH）和Mott可变范围跳频（Mott-VRH）模型。磁行为与氧空位附近的束缚磁极化子（BMP）模型一致。