Abstract We study the impact of increased active nitrogen flux (N-flux) on the indium content and structural properties of InAlN layers grown by plasma-assisted molecular beam epitaxy. It is shown that high N-flux can stabilize In-N bonds, so that In0.18Al0.82N is grown at 605 °C, which is the highest reported temperature so far for the composition lattice-matched (LM) to GaN. A diagram of InAlN indium content is shown as a function of growth temperature and N-flux. The InAlN layers grown using low and high N-flux had grainy surface morphology typical for N-rich conditions. Inhomogeneity in indium distribution on nanometer scale, i.e. typical honeycomb microstructure, is found for InAlN layers grown using both: low and high N-flux. An increase of average cell size is observed for LM-InAlN when the N-flux and growth temperature are increased.

中文翻译：

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高氮通量在等离子体辅助分子束外延 InAlN 生长中的作用

摘要 我们研究了增加的活性氮通量 (N-flux) 对通过等离子体辅助分子束外延生长的 InAlN 层的铟含量和结构特性的影响。结果表明，高 N-flux 可以稳定 In-N 键，因此 In0.18Al0.82N 在 605°C 下生长，这是迄今为止报道的与 GaN 晶格匹配 (LM) 组成的最高温度。InAlN 铟含量图显示为生长温度和 N 通量的函数。使用低和高 N 通量生长的 InAlN 层具有富 N 条件下典型的颗粒状表面形态。对于使用低和高 N 通量生长的 InAlN 层，发现纳米级铟分布的不均匀性，即典型的蜂窝状微观结构。当 N 通量和生长温度增加时，观察到 LM-InAlN 的平均单元尺寸增加。