Abstract AlN films are commonly deposited on sapphire substrates. However, the growth process usually requires high temperature and multi-steps to improve the film quality, due to the large lattice mismatch between the film and substrate. Here we demonstrate that using monolayer MoS2 grown on sapphire as a template, single crystalline AlN films with high crystallinity can be obtained at a much lower growth temperature using helicon sputtering system. The x-ray rocking curve of AlN films prepared on MoS2/sapphire template at 400 °C shows a full width at half maximum of 0.050°, showing a dramatic reduction compared to that of 0.803° for those grown directly on sapphire substrate. The estimated dislocation density of AlN on MoS2/sapphire is decreased to 7.7x107 cm−2, which is comparable to that prepared by metal-organic chemical vapor deposition at high temperatures. The small lattice mismatch between MoS2 and AlN, as well as the polar crystal of monolayer MoS2 apparently improve the quality of AlN films and facilitate AlN formed at lower temperature.

中文翻译：

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使用高度取向的单层 MoS2 作为缓冲层在蓝宝石上低温沉积高质量单晶 AlN 薄膜

摘要 AlN 薄膜通常沉积在蓝宝石衬底上。然而，由于薄膜和衬底之间存在较大的晶格失配，生长过程通常需要高温和多步骤来提高薄膜质量。在这里，我们证明使用在蓝宝石上生长的单层 MoS2 作为模板，可以使用螺旋溅射系统在低得多的生长温度下获得具有高结晶度的单晶 AlN 薄膜。在 400 °C 下在 MoS2/蓝宝石模板上制备的 AlN 薄膜的 X 射线摇摆曲线显示半高全宽为 0.050°，与直接在蓝宝石衬底上生长的薄膜的 0.803° 相比显着降低。估计的 AlN 在 MoS2/蓝宝石上的位错密度降低到 7.7x107 cm-2，这与在高温下通过金属有机化学气相沉积制备的产品相当。MoS2 和 AlN 之间的小晶格失配以及单层 MoS2 的极性晶体明显提高了 AlN 薄膜的质量，并促进了在较低温度下形成的 AlN。