Abstract Aluminum nitride (AlN) easily reacts with water when polished using an aqueous slurry. Moreover, grains tend to easily shed off of the AlN surface since it is a sintered material. Thus, obtaining a smooth AlN surface by traditional mechanical polishing techniques is challenging. Herein, we demonstrate plasma-assisted polishing (PAP) that relies on surface modification by plasma irradiation and removal of the modified layer by ultra-low pressure. After CF4 plasma irradiation, AlN was modified to AlF3, and its modified layer was removed using a diamond abrasive. The material removal rate increased twice by CF4 plasma irradiation compared with that without it.

中文翻译：

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氮化铝陶瓷的高质量等离子辅助抛光

摘要 当使用水性浆料抛光时，氮化铝 (AlN) 很容易与水发生反应。此外，晶粒易于从 AlN 表面脱落，因为它是一种烧结材料。因此，通过传统的机械抛光技术获得光滑的 AlN 表面具有挑战性。在此，我们展示了等离子体辅助抛光 (PAP)，它依赖于通过等离子体照射进行的表面改性和通过超低压去除改性层。在CF4等离子体照射后，AlN被改性为AlF3，并使用金刚石磨料去除其改性层。CF4等离子体辐照的材料去除率比没有它的材料去除率提高了两倍。