Luminescence of SiO₂ during its reactive ion-plasma etching, which was most intense in plasma of fluorine-containing gases, was studied. The luminescence was found to be accompanied by interference. The probable mechanisms of this phenomenon were considered. Use of luminescence to control etching of SiO₂ film and layers of other materials lying on it was shown to be possible.

中文翻译：

---

反应性离子等离子刻蚀过程中二氧化硅发光辉光的干扰**

研究了SiO ₂在其反应性离子-等离子体蚀刻过程中的发光，该发光在含氟气体的等离子体中最为强烈。发现发光伴随有干扰。考虑了这种现象的可能机制。已证明使用发光来控制SiO ₂膜及其上其他材料层的蚀刻是可能的。