Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 × 1019 cm−3, the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 × 1017 cm−3 and 9.1 cm2 V−1 s−1, respectively, at room temperature. The Mg acceptor level was 232 ± 15 meV, which is in good agreement with the previous report.

中文翻译：

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利用 MgO 的 p 型 Mg 掺杂 GaN 的卤化物气相外延

p型GaN:Mg薄膜的卤化物气相外延是通过使用固体MgO作为Mg源实现的。通过在 MgO 源区中供应 HCl 气体来控制 Mg 浓度。在 3.3 和 2.9 eV 附近观察到与镁相关的光致发光峰。对于 Mg 浓度为 2.8 × 1019 cm-3 的样品，霍尔效应测量显示 p 型导电，空穴浓度和空穴迁移率为 1.3 × 1017 cm-3 和 9.1 cm2 V-1 s-1，分别在室温下。Mg 受体水平为 232 ± 15 meV，与之前的报告非常吻合。