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Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-05-18 , DOI: 10.1021/acs.chemmater.0c00830 Jiahan Li 1 , Chao Yuan 2 , Christine Elias 3 , Junyong Wang 4 , Xiaotian Zhang 5 , Gaihua Ye 6 , Chaoran Huang 1 , Martin Kuball 2 , Goki Eda 4, 7, 8 , Joan M. Redwing 5 , Rui He 6 , Guillaume Cassabois 3 , Bernard Gil 3 , Pierre Valvin 3 , Thomas Pelini 3 , Bin Liu 1 , James H. Edgar 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-05-18 , DOI: 10.1021/acs.chemmater.0c00830 Jiahan Li 1 , Chao Yuan 2 , Christine Elias 3 , Junyong Wang 4 , Xiaotian Zhang 5 , Gaihua Ye 6 , Chaoran Huang 1 , Martin Kuball 2 , Goki Eda 4, 7, 8 , Joan M. Redwing 5 , Rui He 6 , Guillaume Cassabois 3 , Bernard Gil 3 , Pierre Valvin 3 , Thomas Pelini 3 , Bin Liu 1 , James H. Edgar 1
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Hexagonal boron nitride (hBN) is attracting much attention due to its tremendous applications including nanophotonic and electronic devices, substrates for two-dimensional (2D) materials, heat management materials, etc. To achieve the best device performance, large area hBN single crystals are required. Herein, large-area (>500 μm each), high-quality (defect density < 0.52/μm2) bulk hBN single crystals are grown from molten metal solutions with a temperature gradient. The narrow Raman line widths of the intralayer E2g mode peak and the interlayer shear mode, the strong and sharp phonon-assisted transition photoluminescence peaks, and the high thermal conductivity demonstrate that the hBN produced by this method has a high crystal quality with a low density of defects. Atomic force microscope images show that atomically flat layers of hBN can be produced by exfoliation. This study not only demonstrates a new strategy for growing large hBN single crystals but also provides high quality thick and thin hBN layers for nanodevice applications.
中文翻译：
六方氮化硼单晶从温度梯度溶液中生长
六方氮化硼（hBN）由于其巨大的应用而备受关注，包括纳米光子和电子器件，二维（2D）材料的基板，热管理材料等。为实现最佳的器件性能，大面积的hBN单晶是需要。这里，大面积（>每个500微米），高品质（缺陷密度<0.52个/μm 2）批量的hBN单晶是由以温度梯度熔融金属溶液中生长。内层E 2g的窄拉曼线宽度峰和层间剪切模式，强而尖的声子辅助过渡光致发光峰以及高热导率表明，用这种方法生产的hBN具有高晶体质量和低缺陷密度。原子力显微镜图像显示，可以通过剥离产生hBN的原子平面层。这项研究不仅展示了生长大型hBN单晶的新策略，而且还为纳米器件应用提供了高质量的厚薄hBN层。
更新日期：2020-06-23
中文翻译：
六方氮化硼单晶从温度梯度溶液中生长
六方氮化硼（hBN）由于其巨大的应用而备受关注，包括纳米光子和电子器件，二维（2D）材料的基板，热管理材料等。为实现最佳的器件性能，大面积的hBN单晶是需要。这里，大面积（>每个500微米），高品质（缺陷密度<0.52个/μm 2）批量的hBN单晶是由以温度梯度熔融金属溶液中生长。内层E 2g的窄拉曼线宽度峰和层间剪切模式，强而尖的声子辅助过渡光致发光峰以及高热导率表明，用这种方法生产的hBN具有高晶体质量和低缺陷密度。原子力显微镜图像显示，可以通过剥离产生hBN的原子平面层。这项研究不仅展示了生长大型hBN单晶的新策略，而且还为纳米器件应用提供了高质量的厚薄hBN层。
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