Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology, we accelerate the development of 300 mm epitaxial wafers manufactured in an industrial CMOS fab and report a remarkable electron mobility of (3.9 ± 0.6) × 10⁵ cm²/Vs and percolation density of (6.9 ± 0.4) × 10¹⁰ cm⁻², representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information, and because of the simplicity of assembly and versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.

量子信息处理的不断发展已导致从主要侧重于测试量子力学的现实的研究模式转变为具有实际量子计算所需数量的工程量子位设备。向大规模固态系统扩展的主要挑战之一是低温恒温器中有限的输入/输出（I / O）连接器，该连接器在亚开尔文温度下运行，以高保真度执行量子逻辑。这种互连瓶颈同样存在于设备制造-测量周期中，这需要高通量和低温表征来开发量子处理器。在这里，我们在次开尔文温度下复用二维电子气的量子传输。我们使用现成的商用CMOS多路复用器来实现导线数量增加一个数量级。利用这项技术，我们加速了在工业CMOS晶圆厂中制造的300 mm外延晶片的开发，并报告了出色的电子迁移率（3.9±0.6）×10⁵  cm ² / Vs和（6.9±0.4）×10 ¹⁰  cm ^-2的渗透密度，代表了向大型硅量子比特阵列迈出的关键一步。我们认为，该演示将激发用于量子信息的低温电子学的发展，并且由于组装和通用性的简单性，我们预见了类似的cryo-CMOS电路将广泛用于高通量量子测量和量子工程系统的控制。