Uncovering the Indium Filament Formation and Dissolution in Transparent ITO/SiNx/ITO Resistive Random Access Memory,ACS Applied Electronic Materials

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Uncovering the Indium Filament Formation and Dissolution in Transparent ITO/SiNx/ITO Resistive Random Access Memory
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-05-19 , DOI: 10.1021/acsaelm.0c00193
Bowen Sun ₁ , Xu Han ₁ , Ruixue Xu ₁ , Kai Qian ₁

Affiliation

The search for decent material systems is the most desirable to obtain superior performances in resistive random access memory (RRAM) devices. Nitride switching materials have attracted much attention in RRAMs due to their excellent device properties such as high-speed and low-energy switching. However, the unclear switching mechanisms, which have been characterized only indirectly, are a critical problem for continued RRAM optimization, especially in transparent devices with indium tin oxide (ITO) electrodes. Here, we demonstrate that transparent ITO/SiN_x/ITO memories (∼82.4% transmittance in the visible region) can exhibit typically bipolar switching behavior. The indium filaments’ formation and annihilation were directly uncovered to be responsible for the resistance change via high-spatial-resolution transmission electron microscopy and energy-dispersive spectroscopy. Information on the dimensions and composition of the filament will provide a foundation to uncover the full switching mechanism in transparent nitride-based memories, offering great potential for RRAM design with high performances.

中文翻译：

在透明ITO / SiN _x / ITO电阻随机存取存储器中发现铟丝的形成和溶解

寻找体面的材料系统是在电阻式随机存取存储器（RRAM）器件中获得优异性能的最理想方法。氮化物开关材料因其出色的器件性能（例如高速和低能耗开关）而在RRAM中引起了广泛关注。但是，不清楚的开关机制（仅间接地表征）是持续进行RRAM优化的关键问题，尤其是在具有氧化铟锡（ITO）电极的透明器件中。在这里，我们演示了透明ITO / SiN _x/ ITO存储器（在可见光区域的透射率约为82.4％）通常会表现出双极开关行为。通过高空间分辨率透射电子显微镜和能量色散光谱法直接发现了铟丝的形成和an灭是电阻变化的原因。有关细丝尺寸和成分的信息将为揭示透明的基于氮化物的存储器中的完整开关机制提供基础，这为高性能RRAM设计提供了巨大潜力。

更新日期：2020-06-23

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