Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse bias condition, the sample with the pulse ratio of 2:1 was explained by Poole–Frenkel emission and the negative temperature dependence for the sample with the pulse ratio of 1:2 was associated with the acceptor levels in the AlGaN layer. Fast interface traps at 0.24–0.29 eV were observed for the samples with the pulse ratios of 1:1 and 1:2, whereas bulk traps at ~0.34 eV were observed for the sample with the pulse ratio of 2:1. Higher trap densities were obtained from the C–V hysteresis measurements when the pulse ratios were 1:1 and 1:2, indicating the presence of a charge trapping interfacial layer. According to the X-ray photoelectron spectroscopy spectra, the pulse ratio of 2:1 was found to have less oxygen-related defects in the AlGaN layer.

中文翻译：

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热原子层沉积AlGaN中AlN和GaN脉冲比对AlGaN / GaN肖特基二极管电性能的影响

使用具有不同AlN和GaN脉冲比（2：1、1：1和1：2）的原子层沉积的AlGaN制备AlGaN / GaN肖特基二极管，并使用电流-电压（I–V）研究了它们的电流传输机理）和电容-电压（C–V）测量。在低反向偏置条件下，脉冲比为2：1的样品由Poole-Frenkel发射解释，脉冲比为1：2的样品的负温度依赖性与AlGaN层中的受主能级相关。对于脉冲比为1：1和1：2的样品，观察到0.24–0.29 eV的快速界面陷阱，而对于脉冲比为2：1的样品，观察到〜0.34 eV的整体陷阱。从C–V获得更高的陷阱密度当脉冲比为1：1和1：2时进行磁滞测量，表明存在电荷俘获界面层。根据X射线光电子能谱，发现2∶1的脉冲比在AlGaN层中具有较少的氧相关缺陷。