Abstract Etch pit real-time observation (EPRTO) technique was employed to study the extended defects in CdZnTe materials. By tracking the pyramidal etch pits on the (1 1 1) A surface etched by Nakagawa etchant, the microstructures inside the extended defects were revealed. The extending directions of the extended defects and corresponding crystallographic orientations were determined by measuring the displacement vectors of the etch pit tips. Then the orientation distributions of the extended defects in CdZnTe samples were obtained and displayed on the [1 1 1] pole figures. The results show that the extended defects in CdZnTe material consist of dislocation lines connected by micro precipitates or dislocation jogs. The extending directions of the defects situate on the connection lines of [0 1 1], [1 0 1] and [1 1 0] on the [1 1 1] pole figure. The defects with extending directions of 〈2 1 1〉 or 〈3 2 1〉 outside the connection lines of [0 1 1], [1 0 1] and [1 1 0] cannot be revealed by Nakagawa etchant. The orientation distribution of the extended defects shows that the pyramidal etch pit density (PEPD) is not sufficient to describe the property of the extended defects in CdZnTe materials. Some additional parameters are proposed for a more comprehensive evaluation.

中文翻译：

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CdZnTe晶体中扩展缺陷的研究

摘要 采用蚀刻坑实时观察（EPRTO）技术研究了CdZnTe材料中的扩展缺陷。通过跟踪由 Nakagawa 蚀刻剂蚀刻的 (1 1 1) A 表面上的金字塔形蚀刻坑，揭示了扩展缺陷内部的微观结构。通过测量蚀刻坑尖端的位移矢量来确定扩展缺陷的扩展方向和相应的晶体取向。然后获得 CdZnTe 样品中扩展缺陷的取向分布并显示在 [1 1 1] 极图上。结果表明，CdZnTe 材料中的扩展缺陷由通过微析出物或位错槽连接的位错线组成。缺陷的延伸方向位于[1 1 1]极图上的[0 1 1]、[1 0 1]和[1 1 0]连接线上。在[0 1 1]、[1 0 1]和[1 1 0]连接线之外延伸方向为<2 1 1>或<3 2 1>的缺陷不能被中川蚀刻剂揭示。扩展缺陷的取向分布表明金字塔形蚀刻坑密度 (PEPD) 不足以描述 CdZnTe 材料中扩展缺陷的特性。提出了一些附加参数以进行更全面的评估。